Features of the current-voltage characteristics and temperature dependences of electric conductivity in porous silicon layers

ABSTRACTThe results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

Download Full-text

Investigation of temperature dependences of current-voltage characteristics of hybrid organic materials based on zinc complexes

Applied Physics ◽

10.51368/1996-0948-2021-5-81-87 ◽

2021 ◽

pp. 81-87

Author(s):

Andrey Tyutyunik ◽

Vladimir Gurchenko ◽

Alim Mazinov

Keyword(s):

Coordination Compound ◽

Electrochemical Analysis ◽

Zinc Complexes ◽

Charge Carriers ◽

Current Voltage ◽

Mobility Of Charge Carriers ◽

Temperature Dependences ◽

Homo And Lumo ◽

Current Voltage Characteristics ◽

Fundamental Values

In this work, we analyzed the current-voltage characteristics in the temperature range of the hybrid organic material C24H24N6O3Zn in order to determine the prospects for using this compound as a semiconductor material. The range of temperature measurements was from 270 to 330 K. An electrochemical analysis of the studied coordination compound was carried out, the energies of the HOMO and LUMO levels were calculated. The method of obtaining, microscopy, and also the method of measuring the temperature dependences of the electrical properties of the obtained thin films of these hybrid materials based on zinc complexes are described. A number of fundamental values of the films of this coordination compound have been calculated: the activation energy is  0.88 eV and the mobility of charge carriers is  1.4710-11 cm V-1 s-1.

Download Full-text

Development of Porous Silicon Based Visible Light Photodetectors

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.538.341 ◽

2013 ◽

Vol 538 ◽

pp. 341-344 ◽

Cited By ~ 1

Author(s):

Yuan Ming Huang ◽

Qing Lan Ma ◽

Bao Gai Zhai

Keyword(s):

Porous Silicon ◽

Visible Light ◽

Silicon Film ◽

Metal Semiconductor Metal ◽

Current Voltage ◽

Voltage Dependent ◽

Current Voltage Characteristics ◽

Silicon Based ◽

Scanning Electron ◽

Tungsten Lamp

Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp

Download Full-text