Numerical Simulation of the Current–Voltage Characteristic of a Bipolar Hafnium-Oxide Memristor

Author(s):  
A. N. Aleshin ◽  
N. V. Zenchenko ◽  
O. A. Ruban
Author(s):  
А.Н. Алёшин ◽  
Н.В. Зенченко ◽  
О.А. Рубан

A finite element model has been developed that allows calculating the current-voltage characteristic of a bipolar memristor based on hafnium oxide Pt/HfO2/TiN, which reflects both the high-resistance and low-resistance states of the memristor. The mathematical basis of the model was Maxwell's equations for the stationary case. The model allows us to evaluate the relationship between the properties of materials included in the structure of the memristor and its operating current.


Author(s):  
Alexander A. Logachev ◽  
Irina N. Poluyanova ◽  
Konstantin K. Zabello ◽  
Sergey M. Shkol'nik

2004 ◽  
Vol 30 (9) ◽  
pp. 736-738
Author(s):  
I. K. Kamilov ◽  
K. M. Aliev ◽  
Kh. O. Ibragimov ◽  
N. S. Abakarova

2018 ◽  
Vol 32 (29) ◽  
pp. 1850323
Author(s):  
Ting Ting Zhang ◽  
Cai Juan Xia ◽  
Bo Qun Zhang ◽  
Xiao Feng Lu ◽  
Yang Liu ◽  
...  

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.


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