Численное моделирование вольт-амперной характеристики биполярного мемристора на основе оксида гафния
2021 ◽
Vol 47
(13)
◽
pp. 39
Keyword(s):
A finite element model has been developed that allows calculating the current-voltage characteristic of a bipolar memristor based on hafnium oxide Pt/HfO2/TiN, which reflects both the high-resistance and low-resistance states of the memristor. The mathematical basis of the model was Maxwell's equations for the stationary case. The model allows us to evaluate the relationship between the properties of materials included in the structure of the memristor and its operating current.
Keyword(s):
1991 ◽
Vol 6
(12)
◽
pp. 1163-1166
◽
Keyword(s):
1999 ◽
Vol 14
(1)
◽
pp. 114-117
◽
2018 ◽
Vol 32
(29)
◽
pp. 1850323
2007 ◽
Vol 50
(8)
◽
pp. 783-787
◽
Keyword(s):
2011 ◽
Vol 44
(1)
◽
pp. 322-326
◽