Ion fountain in plane unipolar and bipolar diodes at relativistic velocities of electrons

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

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Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.754 ◽

2011 ◽

Vol 679-680 ◽

pp. 754-757 ◽

Cited By ~ 3

Author(s):

Viorel Banu ◽

Phillippe Godignon ◽

Xavier Jordá ◽

Mihaela Alexandru ◽

José Millan

Keyword(s):

High Temperature ◽

Output Voltage ◽

Schottky Diodes ◽

Experimental Results ◽

Bandgap Reference ◽

Voltage Reference ◽

Bandgap Voltage Reference ◽

Bipolar Diodes ◽

Stable Voltage ◽

Temperature Applications

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.

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Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.338-342.1363 ◽

2000 ◽

Vol 338-342 ◽

pp. 1363-1366 ◽

Cited By ~ 2

Author(s):

K. Isoird ◽

Laurent Ottaviani ◽

Marie Laure Locatelli ◽

Dominique Planson ◽

Christophe Raynaud ◽

...

Keyword(s):

Breakdown Voltage ◽

Bipolar Diodes

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Monolithic bipolar diodes and their models

IEEE Circuits and Devices Magazine ◽

10.1109/101.75925 ◽

1991 ◽

Vol 7 (2) ◽

pp. 26-31 ◽

Cited By ~ 6

Author(s):

L.M. Rucker

Keyword(s):

Bipolar Diodes

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Exploring the potential of ionic bipolar diodes for chemical neural interfaces

Soft Matter ◽

10.1039/c7sm01732d ◽

2017 ◽

Vol 13 (44) ◽

pp. 8171-8177 ◽

Cited By ~ 10

Author(s):

K. Tybrandt

Keyword(s):

Neural Interfaces ◽

Bipolar Diodes

Ionic bipolar diodes can suppress passive leakage and provide fast delivery, making them ideal for chemically specific neural interfaces.

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Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.299 ◽

2010 ◽

Vol 645-648 ◽

pp. 299-302 ◽

Cited By ~ 7

Author(s):

Birgit Kallinger ◽

Bernd Thomas ◽

Sebastian Polster ◽

Patrick Berwian ◽

Jochen Friedrich

Keyword(s):

Growth Parameters ◽

Threading Dislocations ◽

X Ray ◽

Homoepitaxial Growth ◽

Dislocation Type ◽

Bipolar Diodes ◽

Edge Dislocations ◽

Device Operation ◽

Thick Layers

Basal Plane Dislocations (BPDs) in SiC are thought to cause degradation of bipolar diodes with blocking voltages > 2kV by triggering the formation and expansion of stacking faults during device operation. Hence, low N doped, thick epitaxial layers without BPDs are urgently needed for the realization of long-term stable SiC bipolar diodes. Such epilayers can be achieved if the conversion of the BPD into another harmless dislocation type is supported by proper epitaxial growth parameters and use of vicinal (off-cut) substrates. In this work, the influence of the substrate’s off-cut angle and of the epilayer thickness on BPD density and surface morphology were investigated. The BPD densities of epilayers grown on 2° and 4° off-cut substrates were very low compared to growth on 8° off-axis substrates. X-Ray Topography has proved that all the Threading Dislocations (TD) propagate from the substrate to the epilayer and that BPDs in the substrate convert to Threading Edge Dislocations (TED) in the epilayer, i.e. the dislocation density (DD) of the substrate determines the epilayer’s DD. The conversion of BPDs is supported by the presence of bunched steps as for growth of thick layers on 2° and 4° off-cut substrates.

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