OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

2007 ◽  
Vol 556-557 ◽  
pp. 1007-1010 ◽  
Author(s):  
Christophe Raynaud ◽  
Daniel Loup ◽  
Phillippe Godignon ◽  
Raul Perez Rodriguez ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Semiconductor Devices ◽  
Optical Beam ◽  
Induced Current ◽  
Bipolar Diodes ◽  
High Electric Fields ◽  
Optical Beam Induced Current

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

scholarly journals Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

2018 ◽  
Vol 924 ◽  
pp. 577-580 ◽  
Author(s):  
Dominique Planson ◽  
Besar Asllani ◽  
Hassan Hamad ◽  
Marie Laure Locatelli ◽  
Roxana Arvinte ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Field Enhancement ◽  
Optical Beam ◽  
Induced Current ◽  
Electric Field Enhancement ◽  
Tcad Simulation ◽  
Optical Beam Induced Current

This paper presents OBIC measurements performed at near breakdown voltage on two devices with different JTE doses. Overcurrent has been measured either at the JTE periphery or at the P+ border. Such overcurrent is present due to the electric field enhancement near the breakdown voltage. This hypothesis is proved by the electroluminescence. TCAD simulation of two different JTE doses yielded similar results to the OBIC measurements.

scholarly journals Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)

2020 ◽  
Vol 1004 ◽  
pp. 290-298
Author(s):  
Camille Sonneville ◽  
Dominique Planson ◽  
Luong Viet Phung ◽  
Pascal Bevilacqua ◽  
Besar Asllani
Keyword(s):  
Band Gap ◽  
Spatial Resolution ◽  
High Voltage ◽  
Test Bench ◽  
Wide Band ◽  
Optical Beam ◽  
Induced Current ◽  
Wide Band Gap ◽  
Optical Beam Induced Current

In this paper we present a new test bench called micro-OBIC used to characterized wide band gap semi-conductor. Micro-OBIC allows to get an Optical Beam Induced Current (OBIC) signal with a microscopic spatial resolution. We used micro-OBIC to characterize peripheral protection such as MESA, JTE or JTE in high voltage SiC device.

THE IMPROVEMENT OF THE HIGH VOLTAGE TESTING METHOD

2019 ◽  
pp. 4-14
Author(s):  
V. A. Syasko ◽  
S. S. Golubev ◽  
A. S. Musikhin
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Homogeneous Field ◽  
Inhomogeneous Field ◽  
Minimum Thickness ◽  
Air Gaps ◽  
Testing Method ◽  
Almost All

The high voltage spark testing method of protective dielectric coatings is applied in almost all manufacture areas and is governed by ISO, ASTM etc. However, all of it doesn’t pay proper attention to high voltage forming (DC or AC) and its polarity relative to electrode, influence of environment and electric field inhomogeneity. In that paper a detailed analysis of air gap breakdown forming processes was given. A dependence of electric field strength on an interelectrode gap length was given for homogeneous and highly inhomogeneous electric fields. It was shown a breakdown voltage of air gaps in highly inhomogeneous field is greatly less than in homogeneous field. Also, it is described the breakdown voltage of air gaps with positive polarity is less then with negative polarity. The possibility coatings testing with a minimum thickness up to 50 m while reducing the testing voltage without reducing the reliability of the results is shown.

Hot Spots In 4H Sic P+N Diodes Studied By The Optical Beam Induced Current Technique

1998 ◽  
Vol 512 ◽  
Author(s):  
M. Frischholz ◽  
K. Nordgren ◽  
K. Rottner ◽  
J. Seidel ◽  
A. Schöner ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Leakage Current ◽  
High Voltage ◽  
Hot Spots ◽  
Operating Conditions ◽  
Optical Beam ◽  
Reverse Bias Voltage ◽  
Induced Current ◽  
Reverse Leakage Current ◽  
Optical Beam Induced Current

ABSTRACTThe optical beam induced current (OBIC) technique allows a direct imaging of high voltage PN junctions at a microscopic level under reverse operating conditions by measuring the local variation of the photocurrent. In this paper we focus on the application of the UV-OBIC technique for failure analysis of 4H SiC high voltage P+N diodes.4H SiC P+N diodes with a 2-zone junction termination extension were used. The diodes were characterized in terms of reverse leakage current and breakdown voltage. Various devices were chosen for failure analysis on the base of early breakdown and/or excessive leakage current for OBIC measurements to study extrinsic failures. As a reference we selected diodes that blocked more than 2 kV with a leakage current density of typically less than 0.1 μA/cm2.OBIC measurements have been used to detect failures in devices that manifest themselves as peaks or “hot spots” in the photocurrent distribution. Early breakdown of diodes could be attributed to formation of hot spots in the periphery of the diodes. The appearance of a hot spot preceded any noticeable increase in reverse leakage current and is thus a very sensitive tool to identify defective diodes already at low voltage levels.The photocurrent generated by illumination of hot spots has been measured as a function of reverse bias voltage and the current multiplication factor has been determined.

scholarly journals Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

2014 ◽  
Vol 104 (8) ◽  
pp. 082102 ◽  
Author(s):  
H. Hamad ◽  
C. Raynaud ◽  
P. Bevilacqua ◽  
D. Tournier ◽  
B. Vergne ◽  
...  
Keyword(s):  
Optical Beam ◽  
Photon Absorption ◽  
Induced Current ◽  
Absorption Process ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Bipolar Diodes ◽  
Optical Beam Induced Current
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