Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

2011 ◽  
Vol 679-680 ◽  
pp. 754-757 ◽  
Author(s):  
Viorel Banu ◽  
Phillippe Godignon ◽  
Xavier Jordá ◽  
Mihaela Alexandru ◽  
José Millan
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Schottky Diodes ◽  
Experimental Results ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Bandgap Voltage Reference ◽  
Bipolar Diodes ◽  
Stable Voltage ◽  
Temperature Applications

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material

2010 ◽  
Vol 645-648 ◽  
pp. 1131-1134 ◽  
Author(s):  
Viorel Banu ◽  
Pierre Brosselard ◽  
Xavier Jordá ◽  
Phillippe Godignon ◽  
José Millan
Keyword(s):  
High Temperature ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Experimental Results ◽  
Voltage Reference ◽  
Bandgap Voltage Reference ◽  
Stable Voltage

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports the simulated and experimental results as well and a practical and simplified vision on the principles of thermally compensated voltage reference circuits, usually named bandgap references. For our demonstration, we have used SiC Schottky diodes. The influence of the barrier height and the ideality factor on the voltage reference and a comparison between simulated and experimental results are also presented.

A High Temperature 4H-SiC Voltage Reference for Depletion Mode GaN-Based Circuits

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000118-000121
Author(s):  
ZiHao Zhang ◽  
Jebreel M. Salem ◽  
Dong Sam Ha
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Oil And Gas ◽  
Supply Voltage ◽  
Reference Voltage ◽  
Voltage Reference ◽  
Voltage Range ◽  
Oil And Gas Exploration ◽  
Low Leakage ◽  
Temperature Applications

Abstract High temperature electronics are highly demanded for many applications such as automotive, space, and oil and gas exploration. Electronic circuits for those applications are required to operate reliably without using bulky cooling systems. Circuits based on silicon (Si) suffer from high leakage currents at high temperatures. Silicon Carbide (SiC) circuits, on the other hand, are suitable for high temperature applications due to the wide bandgap and offer high breakdown voltage and low leakage current. This paper presents a negative voltage reference for high temperature applications using commercial-off-the-shelf (COTS) 4H-SiC transistors. The proposed voltage reference adopts Widlar bandgap reference topology, and it aims to provide a negative reference voltage for Gallium Nitride (GaN) circuits operating at high temperatures. Measurement results indicate that the proposed circuit provides a negative reference voltage with a low temperature coefficient of 42 ppm/°C for temperatures ranging from 25 °C to 250 °C. The proposed circuit also operates reliably for a wide supply voltage range of −7.5 V to −15 V for the temperature range.

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Power Supply Voltage ◽  
Gyroscope System ◽  
Bandgap Voltage Reference ◽  
Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Power Devices ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Bandgap Materials ◽  
Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

BANDGAP VOLTAGE REFERENCE IC FOR HV AUTOMOTIVE APPLICATIONS WITH PSEUDO-REGULATED BIAS AND SERVICE REGULATOR

2013 ◽  
Vol 22 (01) ◽  
pp. 1250069 ◽  
Author(s):  
SERGIO SAPONARA ◽  
LUCA FANUCCI ◽  
TOMMASO BALDETTI ◽  
ENRICO PARDI
Keyword(s):  
Operating Temperature ◽  
Input Voltage ◽  
Automotive Application ◽  
Voltage Reference ◽  
Temperature Drift ◽  
Temperature Range ◽  
Linear Regulator ◽  
Bandgap Voltage Reference ◽  
Stable Voltage ◽  
Operating Temperature Range

The paper presents a bandgap voltage reference (BGR) implemented in TSMC 0.25 μm BCD technology for an automotive application. To withstand a car's battery large voltage variations, from 5 V to 40 V, the circuit features an embedded pseudo-regulator providing a stable bias current for the bandgap core. High-voltage (HV) MOS count has been kept low thus allowing the design of a compact BGR with an area of 0.118 mm2. The BGR has been designed to operate in automotive extended temperature range (-40°C to 150°C) and it provides a stable voltage of 1.21 V, which is also used as reference for a cascade 3.7 V linear regulator. Measurements carried on fabricated IC samples prove the effectiveness of the BGR design in terms of supported input voltage variations and operating temperature range, temperature drift, line regulation and PSRR performance.

scholarly journals A high precision bandgap voltage reference

2018 ◽  
Vol 232 ◽  
pp. 04072
Author(s):  
XingGuo Tian ◽  
XiaoNing Xin ◽  
DongYang Han
Keyword(s):  
Low Temperature ◽  
Temperature Coefficient ◽  
High Precision ◽  
Wide Temperature Range ◽  
Supply Voltage ◽  
Market Demand ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Range ◽  
Bandgap Voltage Reference

In order to meet the market demand for wide temperature range and high precision bandgap voltage reference, this paper designs a bandgap reference with wide temperature range and low temperature coefficient. In this paper, the basic implementation principle of the bandgap reference is analyzed.On the basis of the traditional bandgap reference circuit structure,this design adds a trimming network and a temperature compensation network. A new Gaussian bell curve compensation technique is adopted to compensate the low temperature section, and the normal temperature section and the high temperature section respectively. Compared with the existing compensation technology, the versatility and the compensation effect is better. The designed circuit is designed and manufactured based on the Huahong HHNECGE0.35um process. The results show that the output voltage is 2.5V at 2.7V supply voltage and temperature range of -40-125°C.at typical process angle ,the temperature coefficient is 0.54618 PPm/°C,and is within 1PPm/°C at other process angles.

SOI Based Voltage Regulator for High-Temperature Applications

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000207-000213
Author(s):  
B. M. McCue ◽  
R. L. Greenwell ◽  
M. I. Laurence ◽  
B. J. Blalock ◽  
S. K. Islam ◽  
...  
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Supply Voltage ◽  
Full Range ◽  
Input Voltage ◽  
Junction Temperature ◽  
Voltage Regulator ◽  
Gate Driver ◽  
Supply Voltages ◽  
Temperature Applications

Developments in automotive (particularly hybrid-electric vehicles), aerospace, and energy production industries have led to expanding research interest in integrated circuit (IC) design toward high-temperature applications. A high-voltage, high-temperature silicon-on-insulator (SOI) process allows for circuit design to expand into these extreme environment applications. Nearly all electronic devices require a reliable supply voltage capable of operating under various supply voltages and load currents. These supply voltages and load currents can be either DC or time-varying signals. In this work, a stable supply voltage for embedded circuits is generated on chip via a voltage regulator producing a stable 5-V output voltage. Although applications of this voltage regulator are not limited to gate driver circuits, this regulator has been developed to meet the demands of a gate driver IC. The voltage regulator must be able to provide reliable output voltage over an input range from 10 V to 30 V, a temperature range of −25°C to 200°C, and output loads from 0 mA to 200 mA. Additionally, low power stand-by operation is provided to help reduce heat generation resulting in lower operating junction temperature. The designed voltage regulator has been successfully tested from −50°C to 200°C while demonstrating an output voltage variation of less than 10 mV under the full range of input voltage. Additionally, line regulation tests from 10 V to 30 V show a 12-ppm/V supply sensitivity. Full temperature and input voltage range tests reveal that the no-load supply current draw is within 17 mA while still providing in excess of 200-mA load current upon demand. Modifications to the existing design or off-chip biasing can widen the range of attainable output voltages and drive capabilities.

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