Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures

In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyond 273K. The sensor is measured from 150K to 445K covering a temperature range of 295K. In this operating temperature range, the sensor characteristic VD-T is highly linear and it is dominated by the typical dependence of the p-i-n diode voltage on the temperature. The sensor sensitivity is -4.48mV/K for a diode current of 2nA with a maximum error of 4.3K across the full temperature range. Although 4H-SiC p-i-n are mainly focused on very high temperature applications, our analysis on the performance of bipolar diodes at low temperatures highlights its feasibility as temperature sensor for aerospace and high altitude applications where cryogenic temperatures are achieved.

Exploring the potential of ionic bipolar diodes for chemical neural interfaces

Ionic bipolar diodes can suppress passive leakage and provide fast delivery, making them ideal for chemically specific neural interfaces.

Several Approaches to Bipolar Oxide Diodes with High Rectification

We report on advances in the fabrication of high quality bipolar heterodiodes with oxideelectrodes. The highest rectification above 1010 is obtained for a structure from a-ZCO/ZnO/ZnO:Alon Al2O3 (a-ZCO: amorphous ZnCo2O4). Rectification better than 106, a value larger than reportedfor all previous attempts, is obtained for our a-ZCO/a-ZTO (a-ZTO: amorphous zinc tin oxide), a-NiO/ZnO and CuI/ZnO diodes. The ZCO/ZnO has been used as gate in JFETs with ZnO as channel.The bipolar diodes open the field of oxide semiconductor electronics to applications in photovoltaics.

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also a better reverse performance of diodes with larger bend radius.