Volatile Heteroligand Complexes of Copper(II): New Precursors for Chemical Vapor Deposition of Copper Films

2018 ◽  
Vol 91 (7) ◽  
pp. 1068-1075
Author(s):  
B. V. Krisyuk ◽  
A. E. Turgambaeva ◽  
P. A. Stabnikov ◽  
I. K. Igumenov ◽  
S. V. Sysoev ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Films ◽  
Heteroligand Complexes

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

The role of kinetics in the nucleation and void formation in copper films produced by chemical vapor deposition

2000 ◽  
Vol 88 (4) ◽  
pp. 1867-1872 ◽  
Author(s):  
R. Kröger ◽  
M. Eizenberg ◽  
E. Rabkin ◽  
D. Cong ◽  
L. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Void Formation ◽  
Chemical Vapor ◽  
Copper Films

Electroenhanced Metallorganic Chemical Vapor Deposition of Copper Films

2007 ◽  
Vol 10 (5) ◽  
pp. D51 ◽  
Author(s):  
Yu-Lin Kuo ◽  
Chiapyng Lee ◽  
Gene Chen ◽  
Kou-Liang Liu ◽  
Yee-Wen Yen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Films

Ion-induced chemical vapor deposition of copper films with nanocellular microstructures

2003 ◽  
Vol 83 (6) ◽  
pp. 1225-1227
Author(s):  
F. Ross ◽  
C. V. Thompson ◽  
T. Chiang ◽  
H. H. Sawin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Films

Stress and Adhesion of CVD Copper and TiN

1994 ◽  
Vol 356 ◽  
Author(s):  
Tue Nguyen ◽  
David R Evans
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Quantitative Method ◽  
Chemical Vapor ◽  
Copper Deposit ◽  
Process Conditions ◽  
Copper Films ◽  
Barrier Materials ◽  
Good Uniformity

AbstractThe use of copper for interconnect metallization on advanced submicron integrated circuits is attractive because of its inherent low resistivity. To date, chemical vapor deposition (CVD) processes which produce copper films with nearly bulk resistivity and good uniformity have been produced. However, adhesion of the copper deposit to underlying barrier materials, in particular to titanium nitride (TiN), has been problematic. In this work, adhesion has been measured using both a qualitative and a semi-quantitative method and has been correlated with process conditions and precursor formulation.

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