Hopping Mechanism of Charge Transfer in the Thin Layers of a Ge28.5Рb15S56.5 Vitreous System

2018 ◽  
Vol 44 (5) ◽  
pp. 398-401
Author(s):  
R. A. Kastro ◽  
S. D. Khanin ◽  
N. I. Anisimova ◽  
G. I. Grabko
2020 ◽  
Author(s):  
Gennadiy Bordovskii ◽  
Nadezhda Anisimova ◽  
Gennady Grabko

2010 ◽  
Vol 44 (8) ◽  
pp. 1004-1007 ◽  
Author(s):  
N. I. Anisimova ◽  
V. A. Bordovsky ◽  
G. I. Grabko ◽  
R. A. Castro

2020 ◽  
Author(s):  
Zhongwei Li ◽  
Keli Han

Base-stacked structure is an important feature of DNA molecules. But dynamics study on the influences of the stacking effects on charge transfer in DNA is yet rare.In this article, a general rule about the relationship of onsite energies of same bases in a stack is derived by H ̈uckel theory. It is found that the base in the middle position of the stack has lower onsite energy than the bases at the terminals due to squeezing effect, which is different from previous studied neighboring base effect. The former is along-range effect while the latter acts in a short range. Semiempirical MNDO calculations on (A:T) n (n=1∼10) systems verfied the H ̈uckel analysis. From this perspective,the so-called incoherent hopping mechanism is actually somewhat coherent due to the squeezing effect. To understand these stacking effects on charge transfer in DNA,a cross-scale method which combines classical MD simulations, quantum mechanism calculations, Marcus electron transfer theory and kinetic Monte Carlo simulations is developed and applied on hole dynamics in (A:T) n (G:C) (n=1∼10) systems. Although no superexchange mechanism is explicitly involved in the studied systems, a crossover from strong to weak distance-dependency of hole arrival rates, which is an experimentally observed property of hole dynamics in DNA and is thought an evidence of the conversion from superexchange to hopping mechanism, also appears. We attribute it to the stacking effects. Such a result provides a new idea on explaining the crossover of different distance-dependencies of charge transfer rates in DNA. In addition, the squeezing effect may be a new driving force for long-range charge transfer. At the same time, some technical methods developed in the dynamics, e.g. calculations of onsite energies and electronic couplings in a stack, and simulated hole dynamics, etc.,can be generalized to other complex molecular systems with charge transfer behaviors.<br><br>


Author(s):  
Р.А. Кастро ◽  
С.Д. Ханин ◽  
А.П. Смирнов ◽  
А.А. Кононов

AbstractThe results of investigating charge-transfer processes in thin layers of a vitreous system (As_2Se_3)_100 – _ x Bi_ x are presented. A power-law dependence of the conductivity on the frequency and a decrease in the exponent s with increasing temperature are found. Charge transfer is a thermally activated process with two regions in the temperature dependence of the conductivity with the activation energies E _1 = 0.12 ± 0.01 eV and E _2 = 0.23 ± 0.01 eV, respectively. The results are explained in terms of the correlated barrier hopping (CBH) model of hopping conductivity in disordered systems. The main microparameters of the system are calculated: the density of localized states ( N ), the hopping length ( R _ω), and the largest height of the potential barrier ( W _ M ).


Langmuir ◽  
2002 ◽  
Vol 18 (7) ◽  
pp. 2780-2784 ◽  
Author(s):  
Moon-Bong Song ◽  
Jai-Man Jang ◽  
Sang-Eun Bae ◽  
Chi-Woo Lee
Keyword(s):  

2020 ◽  
Author(s):  
Zhongwei Li ◽  
Keli Han

Base-stacked structure is an important feature of DNA molecules. But dynamics study on the influences of the stacking effects on charge transfer in DNA is yet rare.In this article, a general rule about the relationship of onsite energies of same bases in a stack is derived by H ̈uckel theory. It is found that the base in the middle position of the stack has lower onsite energy than the bases at the terminals due to squeezing effect, which is different from previous studied neighboring base effect. The former is along-range effect while the latter acts in a short range. Semiempirical MNDO calculations on (A:T) n (n=1∼10) systems verfied the H ̈uckel analysis. From this perspective,the so-called incoherent hopping mechanism is actually somewhat coherent due to the squeezing effect. To understand these stacking effects on charge transfer in DNA,a cross-scale method which combines classical MD simulations, quantum mechanism calculations, Marcus electron transfer theory and kinetic Monte Carlo simulations is developed and applied on hole dynamics in (A:T) n (G:C) (n=1∼10) systems. Although no superexchange mechanism is explicitly involved in the studied systems, a crossover from strong to weak distance-dependency of hole arrival rates, which is an experimentally observed property of hole dynamics in DNA and is thought an evidence of the conversion from superexchange to hopping mechanism, also appears. We attribute it to the stacking effects. Such a result provides a new idea on explaining the crossover of different distance-dependencies of charge transfer rates in DNA. In addition, the squeezing effect may be a new driving force for long-range charge transfer. At the same time, some technical methods developed in the dynamics, e.g. calculations of onsite energies and electronic couplings in a stack, and simulated hole dynamics, etc.,can be generalized to other complex molecular systems with charge transfer behaviors.<br><br>


2020 ◽  
Vol 62 (1) ◽  
pp. 121
Author(s):  
М.С. Афанасьев ◽  
Е.И. Гольдман ◽  
Г.В. Чучева ◽  
А.Э. Набиев ◽  
Дж.И. Гусейнов ◽  
...  

Abstract In this paper, we present the results of experimental studies of the frequency and temperature dependences of the electrical conductivity of metal–dielectric–semiconductor structures based on ferroelectric films of the Ba_0.8Sr_0.2TiO_3 composition. In the temperature range of 290–400 K and the frequency range of 25–10^6 Hz, the conductivity was found to obey the σ ∝ f  ^0.76 law, which is characteristic of the hopping mechanism of charge transfer over states localized near the Fermi level. The density of these states, average distance and time of jumps are estimated.


2017 ◽  
Vol 5 (2) ◽  
pp. 512-518 ◽  
Author(s):  
Yiqiong Zhang ◽  
Zhaoling Ma ◽  
Dongdong Liu ◽  
Shuo Dou ◽  
Jianmin Ma ◽  
...  

We constructed defective heterointerfaces of p-SnO on n-SnS2 nanosheets by plasma treatment to improve the anode performance in Li-ion batteries.


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