scholarly journals Dimensional effects on the density of states in systems with quasi-relativistic dispersion relations and potential wells

2016 ◽  
Vol 94 (8) ◽  
pp. 773-779 ◽  
Author(s):  
A. Pokraka ◽  
R. Dick

Motivated by the recent discoveries of materials with quasi-relativistic dispersion relations, we determine densities of states in materials with low dimensional substructures and relativistic dispersion relations. We find that these dimensionally hybrid systems yield quasi-relativistic densities of states that are a superposition of the corresponding two- and three-dimensional densities of states.

1977 ◽  
Vol 32 (3-4) ◽  
pp. 295-298 ◽  
Author(s):  
D. Pumpernik ◽  
B. Borštnik ◽  
M. Kertesz ◽  
A. Ažman

Abstract Densities of states for three-dimensional models of binary alloys are calculated with a method based on the negative eigenvalue theorem. Comparison is made with the densities of states obtained by diagonalizations of the Hamiltonian for a certain number of physically different clusters of impurities.


2009 ◽  
Vol 20 (18) ◽  
pp. 185401 ◽  
Author(s):  
I V Antonova ◽  
A G Cherkov ◽  
V A Skuratov ◽  
M S Kagan ◽  
J Jedrzejewski ◽  
...  

2002 ◽  
Vol 16 (23) ◽  
pp. 3491-3501 ◽  
Author(s):  
MARCUS KOLLAR

The dispersion relations of energy bands in solids are characterized by their density of states, but a given density of states may originate from various band structures. We show how a spherically symmetric dispersion can be constructed for any one-band density of states. This method is applied to one-, two- and three-dimensional systems. It also serves to establish that any one-band spectrum with finite bandwidth can be obtained from a properly scaled dispersion relation in the limit of infinite dimensions.


1994 ◽  
Vol 340 ◽  
Author(s):  
L. E. Rumaner ◽  
F.S. Ohuchi

ABSTRACTAlthough heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints. A new concept for fabricating material systems using the atomically abrupt and low dimensional nature of layered materials, called van der Waals epitaxy (VDWE), has been developed. GaSe (Eg = 2.1 eV) has been deposited on the three dimensional surface of GaAs (111) using a molecular beam deposition system. GaSe was evaporated from a single Knudsen source, impinging on a heated substrate. Even with a lattice mismatch of 6% between the substrate and the growing film, good quality single crystal films were grown as determined by RHEED. The films have further been analyzed using a complementary combination of XPS and X-ray reflectivity.


2013 ◽  
Vol 125 (42) ◽  
pp. 11289-11293 ◽  
Author(s):  
Young-Si Jun ◽  
Jihee Park ◽  
Sun Uk Lee ◽  
Arne Thomas ◽  
Won Hi Hong ◽  
...  

2001 ◽  
Vol 86 (8) ◽  
pp. 1582-1585 ◽  
Author(s):  
D. Haude ◽  
M. Morgenstern ◽  
I. Meinel ◽  
R. Wiesendanger

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