Computational investigation of the valid valence state contribution in calculating the electronic stopping power of a proton in bulk Al within the linear response approach

2020 ◽  
Vol 98 (2) ◽  
pp. 167-171 ◽  
Author(s):  
Abdullah Atef Shukri ◽  
Ahmad Al-Qawasmeh ◽  
M.M. Al Shorman ◽  
A. Alsaad

The electronic stopping power is a fundamental quantity to many technological fields that use ion irradiation. Here we investigate the validity of using a fully ab initio computational scheme based on linear response time-dependent density functional theory to predict the random electronic stopping power (RESP) of a proton in bulk aluminum. We verify the power of using the extrapolation scheme to overcome the expected convergence issue of the RESP calculations. We show that the calculated RESP of valence electrons compares well with experimental data for low proton velocity only when at full convergence and including the exchange-correlation effect. We demonstrate that the inclusion of valence states only is sufficient for calculating the electronic stopping power up to the stopping maximum.

2021 ◽  
Vol 75 (11) ◽  
Author(s):  
Edwin E. Quashie ◽  
Xavier Andrade ◽  
Alfredo A. Correa

AbstractWe studied the directional dependency of electronic stopping power of swift light ions in nickel using real-time time-dependent density functional theory. We report a variation of electronic stopping for moving ions as the projectile probes different electronic densities of the host material. These results show that while the predicted magnitude stays in reasonable agreement with experiment, for $$v > 2$$ v > 2 . a.u. simulating only low index crystallographic directions is not enough to sample the experimental average values. The ab initio simulations give us access to microscopic quantities, such as non-adiabatic forces, momentum transfer and transient excited state charges of the projectile and host ions, which are not available through other methods. We report these quantities for the first time.


Author(s):  
I. Yu. Sklyadneva ◽  
Rolf Heid ◽  
Pedro Miguel Echenique ◽  
Evgueni Chulkov

Electron-phonon interaction in the Si(111)-supported rectangular √(7 ) ×√3 phases of In is investigated within the density-functional theory and linear-response. For both single-layer and double-layer √(7 ) ×√3 structures, it...


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lei Wang ◽  
Yongpeng Shi ◽  
Mingfeng Liu ◽  
Ao Zhang ◽  
Yi-Lun Hong ◽  
...  

AbstractThe search for new two-dimensional monolayers with diverse electronic properties has attracted growing interest in recent years. Here, we present an approach to construct MA2Z4 monolayers with a septuple-atomic-layer structure, that is, intercalating a MoS2-type monolayer MZ2 into an InSe-type monolayer A2Z2. We illustrate this unique strategy by means of first-principles calculations, which not only reproduce the structures of MoSi2N4 and MnBi2Te4 that were already experimentally synthesized, but also predict 72 compounds that are thermodynamically and dynamically stable. Such an intercalated architecture significantly reconstructs the band structures of the constituents MZ2 and A2Z2, leading to diverse electronic properties for MA2Z4, which can be classified according to the total number of valence electrons. The systems with 32 and 34 valence electrons are mostly semiconductors. Whereas, those with 33 valence electrons can be nonmagnetic metals or ferromagnetic semiconductors. In particular, we find that, among the predicted compounds, (Ca,Sr)Ga2Te4 are topologically nontrivial by both the standard density functional theory and hybrid functional calculations. While VSi2P4 is a ferromagnetic semiconductor and TaSi2N4 is a type-I Ising superconductor. Moreover, WSi2P4 is a direct gap semiconductor with peculiar spin-valley properties, which are robust against interlayer interactions. Our study thus provides an effective way of designing septuple-atomic-layer MA2Z4 with unusual electronic properties to draw immediate experimental interest.


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