A fast "τx" spin–lattice relaxation process in phosphorus donor pairs in silicon
Keyword(s):
A mechanism is proposed to explain the observed fast τx spin–lattice relaxation processes observed in close phosphorus donor pairs in silicon. The mechanism is based on a mixing of states of different total electronic spin by the hyperfine interaction and a modulation of the pair exchange energy by the lattice vibrations. The exchange-energy expression used is calculated from single-atom wave functions composed of linear combinations of the Bloch states at the six conduction-band minima. The resultant relaxation rate is shown to agree with experimental observations.
1991 ◽
Vol 77
(1)
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pp. 23-27
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Keyword(s):
1975 ◽
Vol 30
(6-7)
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pp. 754-770
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Keyword(s):
1973 ◽
Vol 59
(3)
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pp. 1517-1522
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1970 ◽
Vol 37
(2)
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pp. K65-K68
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