A comparison of the dc and rf characteristics of single and double InP/InGaAs heterojunction bipolar transistors

1996 ◽  
Vol 74 (S1) ◽  
pp. 239-242 ◽  
Author(s):  
W. R. McKinnon ◽  
S. P. McAlister ◽  
Z. Abid ◽  
E. E. Guzzo ◽  
S. Laframboise
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Heterojunction Devices ◽  
Double Heterojunction ◽  
Rf Performance ◽  
Current Blocking

The dc and rf characteristics for InP/InGaAs heterojunction bipolar transistors having a single heterojunction design were measured and compared with those for double heterojunction devices that employ a composite collector. Although the composite-collector design improves the breakdown characteristics of our devices the rf performance was not as good. This we partially attribute to the collector heterojunction, which causes "current blocking".

InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

1992 ◽  
Vol 282 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
R. Esagui
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Gas Source ◽  
High Injection ◽  
Heterojunction Devices ◽  
Double Heterojunction ◽  
Metal Organic

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm−3. Ideality factors (<1.1)were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double PHBT) heterojunction devices. Vceo's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.

Elimination of Current Blocking in Ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors

2010 ◽  
Vol 57 (12) ◽  
pp. 3340-3347 ◽  
Author(s):  
M. Mohiuddin ◽  
Tauseef Tauqeer ◽  
J. Sexton ◽  
R. Knight ◽  
M. Missous
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Current Blocking

17 Gbit/s pin-PD/decision circuit using InP/InGaAs double-heterojunction bipolar transistors

1996 ◽  
Vol 32 (4) ◽  
pp. 393 ◽  
Author(s):  
M. Yoneyama ◽  
E. Sano ◽  
S. Yamahata ◽  
Y. Matsuoka ◽  
M. Yaita
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Decision Circuit
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