InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE
Keyword(s):
Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm−3. Ideality factors (<1.1)were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double PHBT) heterojunction devices. Vceo's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.
1997 ◽
Vol 36
(Part 1, No. 3B)
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pp. 1866-1868
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2006 ◽
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pp. 1564
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pp. 2499
1993 ◽
Vol 32
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pp. L309-L311
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pp. 212-216
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1996 ◽
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Vol 14
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pp. 2225
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