Simulation of the plasma sheath dynamics in a spherical plasma focus

2015 ◽  
Vol 69 (9) ◽  
Author(s):  
Yasar Ay ◽  
Mohamed A. Abd Al-Halim ◽  
Mohamed A. Bourham
2020 ◽  
Vol 46 (10) ◽  
pp. 978-991
Author(s):  
S. F. Garanin ◽  
V. Yu. Dolinskii ◽  
N. G. Makeev ◽  
V. I. Mamyshev ◽  
V. V. Maslov

Author(s):  
L. S. Caballero Bendixsen ◽  
S. C. Bott-Suzuki ◽  
S. W. Cordaro ◽  
M. Krishnan ◽  
S. Chapman ◽  
...  

2019 ◽  
Vol 28 (11) ◽  
pp. 1950097 ◽  
Author(s):  
Yasar Ay

The developed spherical plasma focus model is used in this study to investigate the optimum neutron yield in terms of the gas pressure, cathode radius and external inductance. The optimum values for these parameters are found separately. Then, the charging voltage is varied from 25[Formula: see text]kV to 35[Formula: see text]kV with 1[Formula: see text]kV increment by using these separately found optimum values to see the rate of increase in neutron yield. While the used gas pressure range is 1–40[Formula: see text]Torr with 1[Formula: see text]Torr increment, cathode radius range is 11.5–17[Formula: see text]cm with 0.5[Formula: see text]cm increment. External inductance is varied from 10[Formula: see text]nH to 150[Formula: see text]nH with 5[Formula: see text]nH increment. The optimum values for gas pressure, cathode radius and external inductance are found to be 26[Formula: see text]Torr, 15[Formula: see text]cm and 75[Formula: see text]nH, respectively. Even though combining these separately found optimum values of pressure, cathode radius and external inductance does not necessarily form an optimized set of operational conditions for the SPF, they lead to a higher neutron yield in that while neutron yield with these separately found optimum values at 25[Formula: see text]kV charging voltage is [Formula: see text] (higher than the measured neutron yield of [Formula: see text] at 25[Formula: see text]kV), it increases to [Formula: see text], when charging voltage is increased to 35[Formula: see text]kV. Using these values shows that spherical plasma focus device can be used as a neutron source with high neutron yield (on the order of [Formula: see text]).


2015 ◽  
Vol 35 (2) ◽  
pp. 407-414 ◽  
Author(s):  
Yasar Ay ◽  
Mohamed A. Abd Al-Halim ◽  
Mohamed A. Bourham

2014 ◽  
Vol 32 ◽  
pp. 1460323 ◽  
Author(s):  
S. M. P. Kalaiselvi ◽  
T. L. Tan ◽  
A. Talebitaher ◽  
P. Lee ◽  
R. S. Rawat

The Fast Miniature Plasma Focus (FMPF) device is basically made up of coaxial electrodes with centrally placed anode and six cathode rods surrounding them concentrically. They are enclosed in a vacuum chamber, filled with low pressure operating gas. However, in our experiments, these cathode rods were removed to investigate the influence of them on neon soft X-ray (SXR) and hard X-ray (HXR) emission from the device. On removal of cathode rods, the cathode base plate serves as cathode and the plasma sheath is formed between the anode and the base plate of cathode. Neon was used as the operating gas for our experiments and the FMPF device used is of 235 J energy capacities. The experimental results showed that the FMPF device was able to focus better and the SXR emission efficiency was five times higher without cathode rods than with cathode rods. On the contrary, HXR emission did not vary with and without cathode rods. This observed phenomenon was further cross-checked through imaging of plasma dynamics, with and without cathode rods. FMPF device consists of 4 Pseudo Spark Gap (PSG) switches, which need to operate synchronously to deliver high voltage from capacitors to the anode. It was also seen that, the presence or absence of cathode rods also influence the synchronous operation of PSG switches. It also implies that this is one definite way to optimize the SXR emission from the FMPF device. This study reveals an important finding that, cathode rods play a vital role in the formation of plasma sheath with consequential influence on the radiation emission from plasma focus devices. Enhancement of the X-ray emission from this device is definitely a stepping stone in the realization of this device for industrial applications such as X-ray lithography for semiconductor industries.


2014 ◽  
Vol 21 (12) ◽  
pp. 122706 ◽  
Author(s):  
P. Kubes ◽  
M. Paduch ◽  
J. Cikhardt ◽  
J. Kortanek ◽  
B. Cikhardtova ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document