Image potential in lossy dielectrics

2017 ◽  
Vol 132 (11) ◽  
Author(s):  
Z. Lenac
Keyword(s):  
Lossy Dielectrics

Modeling of Short-Millimeter-Wave CMOS Transmission Line with Lossy Dielectrics with Specific Absorption Spectrum

2013 ◽  
Vol E96.C (10) ◽  
pp. 1311-1318 ◽  
Author(s):  
Kyoya TAKANO ◽  
Shuhei AMAKAWA ◽  
Kosuke KATAYAMA ◽  
Mizuki MOTOYOSHI ◽  
Minoru FUJISHIMA
Keyword(s):  
Absorption Spectrum ◽  
Transmission Line ◽  
Millimeter Wave ◽  
Specific Absorption ◽  
Lossy Dielectrics

scholarly journals Miniaturizing transmon qubits using van der Waals materials

2021 ◽  
Author(s):  
Abhinandan Antony ◽  
Martin Gustafsson ◽  
Guilhem Ribeill ◽  
Matthew Ware ◽  
Anjaly Rajendran ◽  
...  
Keyword(s):  
Parallel Plate ◽  
Hexagonal Boron Nitride ◽  
Van Der Waals ◽  
Spatial Density ◽  
Quantum Computers ◽  
Low Loss ◽  
Quantum Devices ◽  
Lossy Dielectrics ◽  
Circuit Components ◽  
High Coherence

Abstract Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, recently demonstrated in systems of superconducting qubits. However, the capacitor electrodes that comprise these qubits must be large in order to avoid lossy dielectrics. This tactic hinders scaling by increasing parasitic coupling among circuit components, degrading individual qubit addressability, and limiting the spatial density of qubits. Here, we take advantage of the unique properties of van der Waals (vdW) materials to reduce the qubit area by $>1000$ times while preserving the required capacitance without increasing substantial loss. Our qubits combine conventional aluminum-based Josephson junctions with parallel-plate capacitors composed of crystalline layers of superconducting niobium diselenide and insulating hexagonal-boron nitride. We measure a vdW transmon $T_1$ relaxation time of 1.06 $\mu$s, which demonstrates a path to achieve high-qubit-density quantum processors with long coherence times, and the broad utility of layered heterostructures in low-loss, high-coherence quantum devices.

scholarly journals Thin Coatings of Cerium Oxide Nanoparticles with Anti-Reflective Properties

2019 ◽  
Vol 9 (18) ◽  
pp. 3886 ◽  
Author(s):  
Laura J. Romasanta ◽  
Lauriane D’Alençon ◽  
Sara Kirchner ◽  
Christophe Pradère ◽  
Jacques Leng
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Cerium Oxide ◽  
Self Assembly ◽  
Large Scale ◽  
High Refractive Index ◽  
Thin Coatings ◽  
Excellent Candidate ◽  
Lossy Dielectrics ◽  
Uv Visible

Cerium oxide, in addition to its catalytic properties, is also known for its optical properties such as ultraviolet (UV) radiation filtering and a relatively high refractive index ( n > 2 ), which makes it an excellent candidate for multifunctional coatings. Here, we focus on the optical properties of thin deposits (≲2 μ m) of densely packed C e O 2 nanoparticles, which we assemble using two evaporation-based techniques: convective self-assembly (CSA, a type of very slow blade-coating) to fabricate large-scale coatings of controllable thickness—from tens of nanometres to a few micrometers—and microfluidic pervaporation which permits us to add some micro-structure to the coatings. Spectroscopic ellipsometry yields the refractive index of the resulting nano-porous coatings, which behave as lossy dielectrics in the UV-visible regime and loss-less dielectrics in the visible to infra-red (IR) regime; in this regime, the fairly high refractive index (≈1.8) permits us to evidence thickness-tunable anti-reflection on highly refractive substrates, such as silicon, and concomitant enhanced transmissions which we checked in the mid-IR region.

Charge buildup in lossy dielectrics with induced inhomogeneities

1997 ◽  
Vol 4 (5) ◽  
pp. 477-486 ◽  
Author(s):  
R. Coelho ◽  
B. Aladenize ◽  
F. Guillaumond
Keyword(s):  
Lossy Dielectrics

Morphology and Dielectric Properties of Reactively Sputtered Aluminum Nitride Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
A. G. Randolph ◽  
S.K. Kurinec
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Dielectric Strength ◽  
Film Structure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Anion Vacancies ◽  
Lossy Dielectrics ◽  
Auger Electron Spectroscopic Analysis ◽  
Microscopy Examination

ABSTRACTAluminum nitride thin films (∼ 100 mn) have been deposited on silicon substrate by reactive sputtering using Al target in 1:1 Ar:N2 environment. The atomic force microscopy examination revealed continuous microcrystalline film structure. The Auger electron spectroscopic analysis show the presence of oxygen in the films. The annealing at 850 C in nitrogen is found to cause recrystallization and further oxidation of the films. The films can be characterized as lossy dielectrics with relative permittivity ∼ 10, higher than the bulk value of 8.9. Annealing the films is found to reduce anion vacancies and improve the dielectric strength within a range of a few MV/cm in these thin films.

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