THEORY OF PHOTOELECTRON EMISSION FROM AN X-RAY INTERFERENCE FIELD

Author(s):  
IVAN A. VARTANYANTS ◽  
JÖRG ZEGENHAGEN
2020 ◽  
Vol 10 (6) ◽  
pp. 2111
Author(s):  
Yoshihiro Momose ◽  
Takao Sakurai ◽  
Keiji Nakayama

Little is known about the temperature dependence of electron transfer occurring at real metal surfaces. For iron surfaces scratched in seven environments, we report Arrhenius activation energies obtained from the data of photoelectron emission (PE) and X-ray photoelectron spectroscopy (XPS). The environments were air, benzene, cyclohexane, water, methanol, ethanol, and acetone. PE was measured using a modified Geiger counter during repeated temperature scans in the 25–339 °C range under 210-nm-wavelength light irradiation and during light wavelength scans in the range 300 to 200 nm at 25, 200, and 339 °C. The standard XPS measurement of Fe 2p, Fe 3p, O 1s, and C 1s spectra was conducted after wavelength scan. The total number of electrons counted in the XPS measurement of the core spectra, which was called XPS intensity, strongly depended on the environments. The PE quantum yields during the temperature scan increased with temperature, and its activation energies (ΔEaUp1) strongly depended on the environment, being in the range of 0.212 to 0.035 eV. The electron photoemission probability (αA) obtained from the PE during the wavelength scan increased with temperature, and its activation energies (ΔEαA) were almost independent of the environments, being in the range of 0.113–0.074 eV. The environment dependence of the PE behavior obtained from temperature and wavelength scans was closely related to that of the XPS characteristics, in particular, the XPS intensities of O 1s and the O2− component of the O 1s spectrum, the acid–base interaction between the environment molecule and Fe–OH, and the growth of non-stoichiometric FexO. Furthermore, the origin of the αA was attributed to the escape depth of hot electrons across the overlayer.


1997 ◽  
Vol 15 (3) ◽  
pp. 1766-1769 ◽  
Author(s):  
J. G. Tobin ◽  
K. W. Goodman ◽  
F. O. Schumann ◽  
R. F. Willis ◽  
J. B. Kortright ◽  
...  

1994 ◽  
Vol 35 (6) ◽  
pp. 823-833 ◽  
Author(s):  
G. F. Khudorozhko ◽  
I. P. Asanov ◽  
L. N. Mazalov ◽  
É. A. Kravtsova ◽  
G. K. Parygina ◽  
...  

Author(s):  
A. M. Afanas'ev ◽  
R. M. Imamov ◽  
E. Kh. Mukhamedzhanov ◽  
A. N. Chuzo

A simple relation has been established between the Fourier component of the probability density P(z) of photoelectron emission from different depths of a crystal and the angular dependence of the emission of photoelectrons formed in inclined X-ray Laue diffraction, which for the first time permitted the use of a direct method for the reconstruction of the P(z) function. Accurate measurements of the angular dependence of photoelectron emission were carried out on a silicon single crystal with diffraction of Cu Kα radiation for different energy ranges. Photoelectrons were recorded by a proportional gas counter specially designed for the energy analysis of photoelectrons under inclined Laue diffraction conditions. The laws predicted by the theory have been fully confirmed, and the corresponding P(z) functions have been obtained.


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