Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation

We report on room temperature non-resonant detection of terahertz radiation using strained Silicon MODFETs with nanoscale gate lengths. The devices were excited at room temperature by an electronic source at 150 and 300 GHz. A maximum intensity of the photoresponse signal was observed around the threshold voltage. Results from numerical simulations based on synopsys TCAD are in agreement with experimental ones. The NEP and Responsivity were calculated from the photoreponse signal obtained experimentally. Those values are competitive with the commercial ones. A maximum of photoresponse was obtained (for all devices) when the polarization of the incident terahertz radiations was in parallel with the fingers of the gate pads. For applications, the device was used as a sensor within a terahertz imaging system and its ability for inspection of hidden objects was demonstrated.

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Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs

AIUB Journal of Science and Engineering (AJSE) ◽

10.53799/ajse.v16i1.34 ◽

2017 ◽

Vol 16 (1) ◽

pp. 69-74

Author(s):

Md Iktiham Bin Taher ◽

Md. Tanvir Hasan

Keyword(s):

Field Effect ◽

Doping Concentration ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Gate Length ◽

Drain Voltage ◽

Switching Device ◽

Device Applications

Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for switching device applications. The doping of n- and p-layers is varied to evaluate the figure of merits of proposed devices with a gate length of 10 nm. Devices are switched from OFF-state (gate voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain voltage, VDS = 0.75 V. The device with channel doping of 1×1016 cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device performance due to better control of gate over channel. The ON-current (ION), OFF-current (IOFF), subthreshold swing (SS), drain induce barrier lowering (DIBL), and delay time are found to be 6.85 mA/μm, 5.15×10-7 A/μm, 87.8 mV/decade, and 100.5 mV/V, 0.035 ps, respectively. These results indicate that GaN-based MOSFETs are very suitable for the logic switching application in nanoscale regime.

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Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

IEEE Electron Device Letters ◽

10.1109/led.2019.2954537 ◽

2020 ◽

Vol 41 (1) ◽

pp. 8-11 ◽

Cited By ~ 9

Author(s):

Xiaogen Yin ◽

H. Yang ◽

L. Xie ◽

X. Z. Ai ◽

Y. B. Zhang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Length Variation ◽

Gate Length ◽

Metal Gates ◽

High K

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Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.2989736 ◽

2020 ◽

Vol 67 (6) ◽

pp. 2270-2275 ◽

Cited By ~ 3

Author(s):

Kevin G. Crawford ◽

James D. Weil ◽

Pankaj B. Shah ◽

Dmitry A. Ruzmetov ◽

Mahesh R. Neupane ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Length

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Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device

Nanoscale ◽

10.1039/d0nr02170a ◽

2020 ◽

Vol 12 (28) ◽

pp. 15443-15452

Author(s):

Ying Guo ◽

Feng Pan ◽

Gaoyang Zhao ◽

Yajie Ren ◽

Binbin Yao ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Device Performance ◽

Gate Length ◽

Germanium Selenide ◽

Technology Roadmap

ML GeSe field-effect transistors have an excellent device performance, even at the 1 nm gate-length. The on-state current of the devices can fulfill the requirements of the International Technology Roadmap for Semiconductors (2013 version).

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