PIXE STUDIES USING THE VAN-DE-GRAAFF ACCELEARTOR AT BARC, TROMBAY – DIFFERENCES IN ELEMENTAL CONCENTARTIONS IN BLOOD SAMPLES OF CHILDREN

2005 ◽  
Vol 15 (03n04) ◽  
pp. 181-185 ◽  
Author(s):  
DAISY JOSEPH ◽  
A. SAXENA ◽  
S. KAILAS

Metal monitoring is one of the major concern of biological and bio-medical research. The Proton Induced X-ray Emission (PIXE) which is a multi elemental and non-destructive technique for trace element analysis has been set up at the Folded Tandem Ion accelerator (FOTIA) at BARC, Trombay, Mumbai, India. A few of the bioscience applications carried out at the Van de Graaff Laboratory using PIXE will be summarized in this presentation. Tea leaves obtained from the eastern region of India were analyzed by PIXE using 2.5 MeV protons. Trace elements such K , Ca , Ti , Cr , Ni , Mn , Fe , Cu , Zn , Rb and Sr were present in varying concentration in the tea leaves. The soil analysis showed Ti , Y , Zr and Nb in addition to the elements shown in the leaves. Blood samples of children exposed to vehicular traffic exhaust were analyzed for its Pb content and it was seen that the concentrations of Pb in the blood of the children were high (6.0 μg/ml). Pb poisoning of air due to vehicular exhaust is a major concern and cause for air pollution leading to high blood lead levels in children.

Author(s):  
R. Ashok Kumar ◽  
V. John Kennedy ◽  
K. Sasikala ◽  
A.L.C. Jude ◽  
M. Ashok ◽  
...  

1988 ◽  
Vol 7 (5) ◽  
pp. 503-513 ◽  
Author(s):  
R.A. Braithwaite ◽  
S.S. Brown

1 The background, scope and limitations of laboratory methods for the diagnosis of inorganic dead poisoning are outlined in the context of the work of a specialist clinical laboratory for trace element analysis. 2 Data for blood lead, haemoglobin and erythrocyte zinc protoporphyrin concentrations are presented in cases of clinical and sub-clinical poisoning due to accidental or occupational exposure. 3 Data from population surveys of children and adults subject to either environmental or occupational exposure are also shown. 4 In general, analysis for lead in an appropriate specimen of blood offers the single most useful index of exposure. 5 The importance of good accuracy control in such measurements is emphasized.


Author(s):  
John J. Donovan ◽  
Donald A. Snyder ◽  
Mark L. Rivers

We present a simple expression for the quantitative treatment of interference corrections in x-ray analysis. WDS electron probe analysis of standard reference materials illustrate the success of the technique.For the analytical line of wavelength λ of any element A which lies near or on any characteristic line of another element B, the observed x-ray counts at We use to denote x-ray counts excited by element i in matrix j (u=unknown; s=analytical standard; ŝ=interference standard) at the wavelength of the analytical line of A, λA (Fig. 1). Quantitative analysis of A requires an accurate estimate of These counts can be estimated from the ZAF calculated concentration of B in the unknown C,Bu measured counts at λA in an interference standard of known concentration of B (and containing no A), and ZAF correction parameters for the matrices of both the unknown and the interference standard at It can be shown that:


2019 ◽  
Vol 608 ◽  
pp. 247-262 ◽  
Author(s):  
MD Ramirez ◽  
JA Miller ◽  
E Parks ◽  
L Avens ◽  
LR Goshe ◽  
...  

Author(s):  
Yasunori Goto ◽  
Hiroomi Eguchi ◽  
Masaru Iida

Abstract In the automotive IC using thick-film silicon on insulator (SOI) semiconductor device, if the gettering capability of a SOI wafer is inadequate, electrical characteristics degradation by metal contamination arises and the yield falls. At this time, an automotive IC was made experimentally for evaluation of the gettering capability as one of the purposes. In this IC, one of the output characteristics varied from the standard, therefore failure analysis was performed, which found trace metal elements as one of the causes. By making full use of 3D perspective, it is possible to fabricate a site-specific sample into 0.1 micrometre in thickness without missing a failure point that has very minute quantities of contaminant in a semiconductor device. Using energy dispersive X-ray, it is possible to detect trace metal contamination at levels 1E12 atoms per sq cm. that are conventionally detected only by trace element analysis.


Author(s):  
Daniel Araujo Goncalves ◽  
Tina McSweeney ◽  
Mirian Cristina dos Santos ◽  
Marco A. Utrera Martines ◽  
Luiz Francisco Malmonge ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document