COOLING BY INVERSE NOTTINGHAM EFFECT WITH RESONANT TUNNELING

2002 ◽  
Vol 12 (04) ◽  
pp. 1083-1100 ◽  
Author(s):  
Y. YU ◽  
R. F. GREENE ◽  
R. TSU

The Inverse Nottingham Effect (INE) cooling involves emission of electrons above the Fermi level into the vacuum. Our scheme involves the use of a Double Barrier Resonant Tunneling (DBRT) section positioned between the surface and the vacuum for a much increased emission, and to provide energy selectivity for assuring cooling, without surface structuring such as tips and ridges leading to current crowding and additional heating. Unlike resonant tunneling from contact-to-contact, where barrier heights and thicknesses are controlled by the choice of heterojunctions, the work function at the surface dictates the barrier height for tunneling into the vacuum. The calculated field emission via resonant tunneling gives at least two orders of magnitude greater than without resonance, however, without work function lowering, the large gain happens at fairly high field. The use of resonance to enhance cooling by INE results in an important byproduct, an efficient cold-cathode field emitter for vacuum electronics.

2011 ◽  
Vol 399-401 ◽  
pp. 1093-1096
Author(s):  
Yuan Ming Zhou

We study the resonant tunneling in symmetric GaAs/AlxGa1-xAs/InyGa1-yAs double-barrier resonant-tunneling structures. Effects of three factors on the resonant tunneling are simulated and discussed. On increasing the barrier height, the decrease of current density is attributed to the interplay between the increase of the supply function of available electrons and the rapid decrease of the transmission coefficient through the device area, and the lowest Indium content for realizing the zero-bias resonant tunneling increases. With the increase of the barrier (well) width, the decrease of the current density can be explained by the fact that both the supply function and the transmission coefficient decreases, and the lowest Indium content meeting the zero-bias resonant condition decreases.


1996 ◽  
Vol 53 (20) ◽  
pp. 13651-13655 ◽  
Author(s):  
P. D. Buckle ◽  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
R. Grey ◽  
G. Hill ◽  
...  

1995 ◽  
Vol 09 (23) ◽  
pp. 3039-3051
Author(s):  
DILIP K. ROY ◽  
AJIT SINGH

The principles of operation of a double barrier resonant tunneling diode (DBRTD) giving rise to negative differential conductivity effect are first reviewed. Next, the physics of resonant tunneling based on (i) the time-independent conventional approach and (ii) the time-dependent quantum measurement approach, as applied to a DBRTD, is discussed. Expressions for the resonant tunneling current densities through the barriers are then derived on the ideas of quantum measurement. Through the well the current, however, flows by the conventional mechanism. The three current density magnitudes are found to be identical under resonant conditions. Finally, an expression for the resonant tunneling current density due to a group of incident electrons is derived.


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