GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES
2004 ◽
Vol 14
(01)
◽
pp. 175-195
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Keyword(s):
AlGaN thin films and Schottky barrier Al 0.4 Ga 0.6 N diodes exhibit generation-recombination (GR) noise with activation energies of 0.8 - 1 eV. GR noise in AlGaN / GaN Heterostructure Field Effect transistors (HFETs) corresponds to activation energies in the range from 1 - 3 meV to 1 eV. No GR noise is observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN / InGaN / GaN Double Heterostructure Field Effect Transistors (DHFETs). Local levels responsible for the GR noise in HFETs and DHFETs might be located in AlGaN barrier layers.
2004 ◽
Vol 43
(No. 6B)
◽
pp. L777-L779
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2021 ◽
Vol 127
◽
pp. 114576
2005 ◽
Vol 275
(3-4)
◽
pp. 398-403
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2015 ◽
Vol 79
◽
pp. 21-28
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