NOISE CHARACTERISTICS OF 340 nm AND 280 nmGaN-BASED LIGHT EMITTING DIODES
2004 ◽
Vol 14
(03)
◽
pp. 702-707
Keyword(s):
Uv Leds
◽
Low frequency fluctuations in light intensity of 340 nm and 280 nm GaN -based light emitting diodes (LEDs) are compared with noise properties of other commercially available UV and visible wavelength LEDs and halogen lamps. At low frequencies, LEDs can exhibit lower levels of noise than halogen lamps. An LED noise quality factor β is estimated for the UV LEDs.