AlGaAs/GaAs HBTs FOR ANALOG AND DIGITAL APPLICATIONS

1994 ◽  
Vol 05 (03) ◽  
pp. 213-252 ◽  
Author(s):  
KEH-CHUNG WANG ◽  
RANDALL B. NUBLING ◽  
KEN PEDROTTI ◽  
NENG-HAUNG SHENG ◽  
PETER M. ASBECK ◽  
...  
Keyword(s):  
High Speed ◽  
High Performance ◽  
High Accuracy ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Electronic Systems ◽  
Ic Technology

AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technology has emerged as an important IC technology for high performance electronic systems. Many outstanding circuits have been demonstrated as a result of the AlGaAs/GaAs HBTs high speed, high accuracy and its semi-insulating substrate. Several GaAs HBT manufacturing lines have been established; some of which are shipping products. In this paper, we describe AlGaAs/GaAs HBT technology, summarize some key and representative circuits in analog, A/D conversion and digital applications, and provide prospects of GaAs HBT research.

High-performance InP/InGaAs pnp δ-doped heterojunction bipolar transistor

2005 ◽  
Vol 30 (3) ◽  
pp. 167-169 ◽  
Author(s):  
J.-H. Tsai ◽  
K.-P. Zhu ◽  
Y.-C. Chu ◽  
S.-Y. Chiu
Keyword(s):  
High Performance ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

High Performance Materials and Devices for High-Speed Electronic Systems

10.1142/11156 ◽  
2018 ◽  
Author(s):  
F Jain ◽  
C Broadbridge ◽  
H Tang ◽  
M Gherasimova
Keyword(s):  
High Speed ◽  
High Performance ◽  
Electronic Systems

Amorphous Silicon Ultra Thin Base Bipolar Phototransistor with High Performance (β=12, τx ≤30μs)

1985 ◽  
Vol 54 ◽  
Author(s):  
C. Y. Chang ◽  
B. S. Wu ◽  
Y. K. Fang ◽  
R. H. Lee
Keyword(s):  
Amorphous Silicon ◽  
High Speed ◽  
High Performance ◽  
Response Speed ◽  
High Gain ◽  
Bipolar Transistor ◽  
Current Gain ◽  
Flat Panel Display ◽  
Element Array ◽  
Good Agreement

ABSTRACTAn n+ /i/p /i/n amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 yS This new structure of bipolar transistor has a very thin base (200Å), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement.Variation from the fundamental structure is also been developed, such as the Schottky emitter Al/i/p /i/n bipolar transistor.

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