Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications

2004 ◽  
Vol 22 (3) ◽  
pp. 1565 ◽  
Author(s):  
D. Lubyshev ◽  
J. M. Fastenau ◽  
X.-M. Fang ◽  
Y. Wu ◽  
C. Doss ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Metamorphic Buffers

scholarly journals Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor

2020 ◽  
Vol 829 ◽  
pp. 154542 ◽  
Author(s):  
Bing Ren ◽  
Meiyong Liao ◽  
Masatomo Sumiya ◽  
Jian Li ◽  
Lei Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

VLSI Design ◽  
2009 ◽  
Vol 2009 ◽  
pp. 1-9 ◽  
Author(s):  
Mohammad Javad Sharifi ◽  
Davoud Bahrepour
Keyword(s):  
Electron Mobility ◽  
Resonant Tunneling ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Xor Gate ◽  
High Electron Mobility ◽  
Existing Structures ◽  
Input And Output ◽  
Exclusive Or

A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization

1992 ◽  
Vol 61 (8) ◽  
pp. 922-924 ◽  
Author(s):  
P. Win ◽  
Y. Druelle ◽  
A. Cappy ◽  
Y. Cordier ◽  
J. Favre ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications

2007 ◽  
Vol 46 (6A) ◽  
pp. 3385-3387 ◽  
Author(s):  
Chia-Yuan Chang ◽  
Edward Yi Chang ◽  
Yi-Chung Lien ◽  
Yasuyuki Miyamoto ◽  
Chien-I Kuo ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Ka Band
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