HIGH POWER HANDLING SUPERCONDUCTING PLANAR FILTERS FOR TELECOMMUNICATION APPLICATIONS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 3092-3097
Author(s):  
A. CASSINESE ◽  
A. ANDREONE ◽  
P. ORGIANI ◽  
F. PALOMBA ◽  
G. PICA ◽  
...  

Passive microwave filters based on HTS films are very promising for telecommunication applications. We report on the design, obtained using a commercial 2.5D software, and the realization of filters, fabricated with double sided YBCO films grown on LaAlO 3 substrates, for both receiving and transmission systems. For the receiving side, planar multi-pole interdigital L-band filters with 75 MHz transmission bandwidths have been fabricated on 2" substrates. Up to 80 K this kind of filter, based on a Tchebischev response, shows an insertion loss lower than 0.5 dB with a ripple of 0.3 dB for a maximum input power of 2 Watts. For the transmitting side, dual-mode filters represent one of the main interesting configuration to exploit since they can combine a high power handling capability with miniaturization requirements. A novel kind of dual-mode C-band filter based on cross slotted square resonators is presented. The novelty of the proposed structure is to use a pair of unequal crossed slots that are formed on a square patch resonator such that its structure size can be significantly reduced. A prototypal device operating at 3.7 GHz is fabricated with different type of couplings on 10 × 10 mm 2 LaAlO 3 substrate to showcase our proposal. The behavior of the filter as a function of the input power has been tested up to 2 Watts limited by the amplified power supply.

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
L. Liu ◽  
Y. Zhang ◽  
J. Q. Sheng ◽  
Y. M. Wei ◽  
R. M. Liu ◽  
...  

2006 ◽  
Vol 49 (2) ◽  
pp. 254-257 ◽  
Author(s):  
Xubo Guo ◽  
Xiaoping Zhang ◽  
Bisong Cao ◽  
Bin Wei ◽  
Lijuan Mu ◽  
...  

1991 ◽  
Vol 240 ◽  
Author(s):  
J. H. Zhao ◽  
R. Lis ◽  
D. Coblentz ◽  
J. Illan ◽  
S. McAfee ◽  
...  

ABSTRACTAn MOCVD grown InP based optothyristor has been fabricated and tested for high power pulsed switching applications. To increase the power handling capability, the thyristor structure has a 250 μm thick Fe doped semi-insulating (SI) InP sandwiched between two pn junctions of a conventional thyristor. The turn-on of the thyristor is controlled by optical illumination on the SI-InP which creates a high concentration of electron and hole pairs. More than 1,100 V device hold-off voltage has been observed and over 66 A switched current has been realized with a di/dt rating of 1.38×1010 A/s. The switched current as a function of switch voltage and of optical illumination power has also been studied. Comparison with the switching characteristics of a bulk SI-InP photoconductive switch clearly indicates the advantage of this optothyristor in terms of power handling capability.


2018 ◽  
Vol 10 (3) ◽  
pp. 308-312
Author(s):  
Kaijun Song ◽  
Te Kong ◽  
Yu Zhu ◽  
Hongxing Xu ◽  
Lifei Jiang ◽  
...  

AbstractA novel Gysel power divider with high power-handling capability based on half-mode substrate integrated waveguide (HMSIW) has been presented in this paper. A HMSIW ring is used and good input/output impedance matching is achieved based on HMSIW-microstrip taper transition. Two microstrip stubs are introduced in HMSIW ring to assemble two isolation resistors to improve the isolation between the output ports. The even- and odd-mode analysis method is used for the presented circuit. A prototype of the presented power divider is designed, fabricated, and measured. The measured results show a reasonable agreement with the simulated ones.


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