COHERENT SPIN DYNAMICS OF ELECTRONS IN II-VI SEMICONDUCTOR QUANTUM WELLS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1336-1346 ◽  
Author(s):  
D. R. YAKOVLEV ◽  
E. A. ZHUKOV ◽  
M. BAYER ◽  
G. KARCZEWSKI ◽  
T. WOJTOWICZ ◽  
...  

Coherent spin dynamics of electrons and holes is studied experimentally in CdTe/Cd 0.78 Mg 0.22 Te quantum wells with a two-dimensional electron gas of low density. A picosecond pump-probe Kerr rotation and time-resolved polarized photoluminescence detected by a streak camera are used as experimental techniques. Strong Coulomb interaction between electrons and holes, which results in large binding energies of neutral and negatively charged excitons (trions), allows selective addressing of exciton and trion states with resonant optical excitation. Spin dephasing time of electrons up to 30 ns is achieved at a low temperature of 1.9 K and in a zero magnetic field limit. It decreases for higher lattice temperatures and with increase of excitation density. Spin relaxation times for exciton of 65 ps and trion of 25 ps have been measured under quasi-resonant excitation of excitons.

1997 ◽  
Vol 56 (16) ◽  
pp. 10412-10422 ◽  
Author(s):  
M. Dyakonov ◽  
X. Marie ◽  
T. Amand ◽  
P. Le Jeune ◽  
D. Robart ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1112
Author(s):  
Satoshi Iba ◽  
Ryogo Okamoto ◽  
Koki Obu ◽  
Yuma Obata ◽  
Yuzo Ohno

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τPL), and electron spin relaxation times (τs) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature Tg (430–600 °C) and a high V/III flux ratio using As2. At 530 °C < Tg < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τPL~40 ns at RT, one order of magnitude longer than those reported so far. Long τs (~6 ns) is also observed at RT.


2001 ◽  
Vol 690 ◽  
Author(s):  
Sergey D. Ganichev ◽  
Sergey N. Danilov ◽  
Martin Sollinger ◽  
Dieter Weiss ◽  
Werner Wegscheider ◽  
...  

ABSTRACTIt is shown that monopolar optical spin orientation of free carriers in zinc-blende structure based quantum wells (QWs) causes an electric current which reverses its direction upon changing the helicity of the radiation from left to right circular polarization resulting in a circular photogalvanic effect. The monopolar non-equilibrium population of spin-up and spin-down states has been achieved by far-infrared optical excitation ofp- andn-type GaAs/AlGaAs QWs structures. Two methods are introduced allowing to determine spin relaxation times. One is based on the Hanle effect in magnetic field induced circular photogalvanic effect, the other is spin sensitive bleaching of absorption. In contrast to usually applied methods of optical spin orientation, in the present case of terahertz excitation only one kind of charge carriers is involved in spin orientation and relaxation processes.


2019 ◽  
Vol 126 (15) ◽  
pp. 153901 ◽  
Author(s):  
J. H. Buß ◽  
T. Schupp ◽  
D. J. As ◽  
D. Hägele ◽  
J. Rudolph

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