scholarly journals Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1112
Author(s):  
Satoshi Iba ◽  
Ryogo Okamoto ◽  
Koki Obu ◽  
Yuma Obata ◽  
Yuzo Ohno
Keyword(s):  
Quantum Wells ◽  
Spin Dynamics ◽  
Relaxation Times ◽  
Flux Ratio ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Electron Spin Relaxation ◽  
Carrier Lifetimes ◽  
Wide Range

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τPL), and electron spin relaxation times (τs) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature Tg (430–600 °C) and a high V/III flux ratio using As2. At 530 °C < Tg < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τPL~40 ns at RT, one order of magnitude longer than those reported so far. Long τs (~6 ns) is also observed at RT.

Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3μm

2006 ◽  
Vol 89 (21) ◽  
pp. 211122 ◽  
Author(s):  
C. Reith ◽  
S. J. White ◽  
M. Mazilu ◽  
A. Miller ◽  
J. Konttinen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electron Spin Relaxation ◽  
Temperature Electron

Time resolved inter-subband relaxation in GaAs/GaAlAs multiple quantum wells

1989 ◽  
Vol 32 (12) ◽  
pp. 1869-1873 ◽  
Author(s):  
J.A. Levenson ◽  
G. Dolique ◽  
J.L. Oudar ◽  
I. Abram
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

Spin–orbit parameters derivation using single-frequency analysis of InGaAs multiple quantum wells in transient spin dynamics regime

2020 ◽  
Vol 127 (15) ◽  
pp. 153901
Author(s):  
Hiroki Shida ◽  
Kohei Kawaguchi ◽  
Yasuhito Saito ◽  
Ichirota Takazawa ◽  
Toshiki Fukasawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Frequency Analysis ◽  
Spin Dynamics ◽  
Multiple Quantum Wells ◽  
Single Frequency ◽  
Multiple Quantum ◽  
Spin Orbit
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