Hall and Nernst effects in monolayer MoS2

2016 ◽  
Vol 30 (08) ◽  
pp. 1650041 ◽  
Author(s):  
Yun-Hai Zhang ◽  
Ming-Hua Zhang
Keyword(s):  
Low Temperature ◽  
Temperature Gradient ◽  
Spin Orbit ◽  
Zero Temperature ◽  
Monolayer Mos2 ◽  
Orbit Splitting ◽  
Berry Curvature ◽  
System Transition ◽  
Spin Orbit Splitting ◽  
Study Hall

We study Hall and Nernst transports in monolayer MoS2based on Green’s function formalism. We have derived analytical results for spin and valley Hall conductivities in the zero temperature and spin and valley Nernst conductivities in the low temperature. We found that tuning of the band gap and spin-orbit splitting can drive system transition from spin Hall insulator (SHI) to valley Hall insulator (VHI). When the system is subjected to a temperature gradient, the spin and valley Nernst conductivities are dependent on Berry curvature.

Reversible engineering of spin-orbit splitting in monolayer MoS2 via laser irradiation under controlled gas atmospheres

Nanoscale ◽  
2021 ◽  
Author(s):  
Xilong Liang ◽  
Chengbing Qin ◽  
Yan Gao ◽  
Shuangping Han ◽  
Guofeng Zhang ◽  
...  
Keyword(s):  
Degrees Of Freedom ◽  
Transition Metal Dichalcogenides ◽  
Inversion Symmetry ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Monolayer Mos2 ◽  
Orbit Splitting ◽  
Spin Orbit Splitting ◽  
Metal Dichalcogenides ◽  
Strong Spin

Monolayer transition metal dichalcogenides, manifesting strong spin-orbit coupling combined with broken inversion symmetry, lead to a coupling of spin and valley degrees of freedom. These unique features make them highly...

scholarly journals Spin-orbit splitting and effective masses inp-type GaAs two-dimensional hole gases

2014 ◽  
Vol 89 (8) ◽  
Author(s):  
Fabrizio Nichele ◽  
Atindra Nath Pal ◽  
Roland Winkler ◽  
Christian Gerl ◽  
Werner Wegscheider ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Two Dimensional ◽  
Orbit Splitting ◽  
Effective Masses ◽  
Spin Orbit Splitting

scholarly journals Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications

2012 ◽  
Vol 101 (22) ◽  
pp. 221108 ◽  
Author(s):  
I. P. Marko ◽  
Z. Batool ◽  
K. Hild ◽  
S. R. Jin ◽  
N. Hossain ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Mid Infrared ◽  
Spin Orbit Splitting
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