Binding Energies of Excitons in GaAs/AlAs Quantum Wells Under Pressure

2003 ◽  
Vol 17 (16) ◽  
pp. 863-870 ◽  
Author(s):  
Guojun Zhao ◽  
X. X. Liang ◽  
S. L. Ban
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Pressure Effect ◽  
Interpolation Method ◽  
Linear Interpolation ◽  
Longitudinal Optical ◽  
Variational Calculation ◽  
Binding Energies ◽  
Optical Phonons ◽  
Phonon Interaction

The binding energy of an exciton in the GaAs/AlAs quantum well is discussed including the influence of interface optical phonons and bulk longitudinal optical phonons confined in the well under hydrostatic pressure. The dependence of the phonon energies on pressure is considered using a linear interpolation method to obtain the pressure effect on the exciton binding energy by a variational calculation. The result shows that the polaronic effect on the exciton binding energies cannot be neglected and the pressure effect on the exciton-phonon interaction is obvious.

The Effect of Hydrostatic Pressure on Bound Polarons in Polar Semiconductor Heterojunctions

2003 ◽  
Vol 17 (17) ◽  
pp. 909-919 ◽  
Author(s):  
Y. L. Cao ◽  
S. L. Ban ◽  
G. J. Zhao
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Variational Method ◽  
Pressure Effect ◽  
Longitudinal Optical ◽  
Binding Energies ◽  
Optical Phonons ◽  
Semiconductor Heterojunctions ◽  
Effect Of Hydrostatic Pressure

A variational method is used to investigate the binding energies of bound polarons near the interface in a GaAs/Al x Ga 1-x As heterojunction by considering the hydrostatic pressure effect. It is found that the comprehensive pressure effect on the heterojunction factors increases the binding energies near linearly. The pressure influence on the binding energy for the impurity located on the channel side is stronger than that for the impurity located on the barrier side. The pressure effect is more obvious when the impurity is located on the channel side and is not so far from the interface. The pressure influences on the longitudinal optical phonons and interface optical phonons are discussed.

ELECTRIC FIELD EFFECTS ON POLARONS WITH SPATIALLY DEPENDENT MASS IN PARABOLIC QUANTUM WELLS

2004 ◽  
Vol 18 (22) ◽  
pp. 2991-2999 ◽  
Author(s):  
FENG-QI ZHAO ◽  
ZI-ZHENG GUO
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Effective Mass ◽  
Energy Levels ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Dependent Mass ◽  
Parabolic Quantum Wells

The free polaron energy levels in finite GaAs / Al x Ga 1-x As parabolic quantum wells have been investigated by a modified variational method. The effect of the electric field, the electron-phonon interaction including the longitudinal optical phonons and the four branches of interface optical phonons, and the effect of spatial dependent effective mass have been considered in the calculation. The dependence of the energies of free polarons on the alloy composition x is given. The numerical results for finite GaAs / Al x Ga 1-x As parabolic quantum wells are obtained and discussed. The results show that the effect of the electric field and the interface optical phonons as well as the longitudinal optical phonons on the energy levels is obvious. One can find that the effect of the spatially dependent effective masses on the energy levels in finite parabolic quantum wells is considerable except for large well width. Thus, the electron-phonon interaction and the effect of the spatially dependent effective mass should not be neglected for the study of the electron state problem in finite parabolic quantum wells.

scholarly journals Многократное изменение электрон-фононного взаимодействия в квантовых ямах с диэлектрически различными барьерами

2022 ◽  
Vol 56 (1) ◽  
pp. 101
Author(s):  
А.Ю. Маслов ◽  
О.В. Прошина
Keyword(s):  
Quantum Wells ◽  
Charged Particles ◽  
Strong Interactions ◽  
Asymmetric Structure ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Barrier Materials ◽  
Electron Phonon Interaction ◽  
Order Of Magnitude

Abstract The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition.

Free-carrier screening of the interaction between excitons and longitudinal-optical phonons inInxGa1−xAs-InP quantum wells

1987 ◽  
Vol 35 (11) ◽  
pp. 5925-5928 ◽  
Author(s):  
M. S. Skolnick ◽  
K. J. Nash ◽  
P. R. Tapster ◽  
D. J. Mowbray ◽  
S. J. Bass ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Longitudinal Optical ◽  
Carrier Screening ◽  
Free Carrier ◽  
Optical Phonons

scholarly journals Configuration space method for calculating binding energies of exciton complexes in quasi-1D/2D semiconductors

2016 ◽  
Vol 30 (24) ◽  
pp. 1630006 ◽  
Author(s):  
I. V. Bondarev
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Configuration Space ◽  
Binding Energies ◽  
Electron Hole ◽  
Coupled Quantum Wells ◽  
2D Semiconductors ◽  
Crossover Behavior ◽  
Confined Structures ◽  
Space Method

A configuration space method is developed for binding energy calculations of the lowest energy exciton complexes (trion, biexciton) in spatially confined quasi-1D semiconductor nanostructures such as nanowires and nanotubes. Quite generally, trions are shown to have greater binding energy in strongly confined structures with small reduced electron–hole masses. Biexcitons have greater binding energy in less confined structures with large reduced electron–hole masses. This results in a universal crossover behavior, whereby trions become less stable than biexcitons as the transverse size of the quasi-1D nanostructure increases. The method is also capable of evaluating binding energies for electron–hole complexes in quasi-2D semiconductors such as coupled quantum wells and bilayer van der Walls bound heterostructures with advanced optoelectronic properties.

DEPENDENCE OF EXCITON FORMATION ON ITS CENTER-OF-MASS MOMENTUM IN QUANTUM WELLS

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3660-3663 ◽  
Author(s):  
I.-K. OH ◽  
JAI SINGH
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Acoustic Phonon ◽  
Center Of Mass ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Carrier Temperature ◽  
Comprehensive Study

We present a comprehensive study of the process of exciton formation due to exciton-phonon interaction. Using the exciton-phonon interaction arising from deformation potential, piezoelectric, and polar couplings, we have calculated the rate of formation of an exciton as a function of carrier densitiies, temperatures, and center-of-mass momentum ( K ‖) in quantum wells. Our results show that excitons are dominantly formed at non-zero K ‖, which agrees very well with experiments. The formation of an exciton due to emission of longitudinal optical phonon is found to be more efficient at relatively small values of K ‖, and that due to acoustic phonon emission is more efficient at relatively large K ‖ values for carrier temperature Te-h≲50 K.

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