FIRST-PRINCIPLES CALCULATIONS ON ELECTRONIC STRUCTURES OF TiO2 ANATASE (101) SURFACES WITH N IMPURITIES
2011 ◽
Vol 25
(02)
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pp. 119-129
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The electronic structures of nitrogen ( N )-doped TiO 2 anatase (101) surfaces have been investigated by density functional theory (DFT) plane-wave pseudopotential method with general gradient approximation (GGA) + U (Hubbard coefficient) method being adopted to describe the exchange-correlation effects. Both substitutional and interstitial N doping have been considered in this paper as well as the case of surface N adsorption. The results demonstrated that there is no obvious band gap narrowing observed by introducing N impurities except several N 2p states lying in the gap, whereas the introduction of oxygen vacancy was confirmed playing an important role on band gap narrowing. The results accord well with some experimental results.
2010 ◽
Vol 156-157
◽
pp. 1385-1388
2014 ◽
Vol 614
◽
pp. 70-74
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2013 ◽
Vol 562-565
◽
pp. 1166-1170
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2017 ◽
Vol 19
(5)
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pp. 3679-3687
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2020 ◽
Vol 31
(12)
◽
pp. 2050178
2005 ◽
Vol 475-479
◽
pp. 3103-3106
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