COMPLEXITY AND SYNCHRONIZATION IN CHAOTIC INJECTION-LOCKING SEMICONDUCTOR LASERS

2011 ◽  
Vol 25 (26) ◽  
pp. 2061-2067 ◽  
Author(s):  
LEI YANG ◽  
WEI PAN ◽  
LIAN SHAN YAN ◽  
BIN LUO ◽  
SHUI YING XIANG ◽  
...  

The chaotic complexity properties of semiconductor lasers in the chaotic synchronization systems are investigated numerically, based on the information theory based quantifier, the permutation entropy (PE). We find that, on the one hand, the degree of complexity for the master laser increases with the feedback strength firstly and then saturate at higher feedback strength, but are hardly affected by the feedback delay. On the other hand, for the slave laser, the complexity degree is closer to that for the master laser when the high quality chaos synchronization is obtained, which shows that, the PE method is a successful quantifier to evaluate the degree of complexity for the chaotic signals in chaos synchronization systems, and can be considered as a complementary tool to observe the synchronization quality.

2012 ◽  
Vol 26 (12) ◽  
pp. 1250073 ◽  
Author(s):  
HUI-MIN YANG

The bandwidth properties of chaotic signals generated by semiconductor lasers subject to strong chaotic optical injection (COI) are investigated numerically. The chaotic output of an injection master laser (ML) is injected into the slave laser (SL). The effects of feedback strength, injection strength and bias current on the bandwidth properties are discussed in detail. Some novel results are found, the bandwidth for SL increases with the injection strength firstly until reaches a maximum, and then decrease to approach the bandwidth of ML due to the injection-locking chaos synchronization. Large feedback strength and bias current contributes to higher maximum chaotic bandwidth in the range of injection strength. That is to say, for given parameters, optimal injection strength exists contributing to highest chaotic bandwidth, and moves to a large value for a large feedback strength and bias current, which is extremely useful for increasing the transmission rate of the optical chaotic communication system.


2017 ◽  
Vol 27 (11) ◽  
pp. 1750169 ◽  
Author(s):  
Liyue Zhang ◽  
Wei Pan ◽  
Penghua Mu ◽  
Xiaofeng Li ◽  
Shuiying Xiang ◽  
...  

The important role of parameters in master laser with optical feedback for the elimination of time-delay (TD) signature in semiconductor laser subject to chaotic optical injection is investigated systemically. The experimental results show that TD signature suppressed chaotic signals can be credibly generated by increasing the feedback strength of the master laser, which is quite different from the trends observed in semiconductor laser (SL) with optical feedback. Systematically numerical analysis is also carried out as a validation, and it is shown that with low bias current and strong feedback strength, parameter regions contributing to successful TD suppression are much wider. Furthermore, it is shown that the influence of frequency detuning in TD concealment will change with the increase of feedback strength. All the numerical results are in perfect accordance with experimental observation.


2003 ◽  
Vol 39 (2) ◽  
pp. 269-278 ◽  
Author(s):  
Yun Liu ◽  
P. Davis ◽  
Y. Takiguchi ◽  
T. Aida ◽  
S. Saito ◽  
...  

2020 ◽  
Vol 28 (7) ◽  
pp. 9477 ◽  
Author(s):  
Ning Jiang ◽  
Anke Zhao ◽  
Shiqin Liu ◽  
Yiqun Zhang ◽  
Jiafa Peng ◽  
...  

2013 ◽  
Vol 798-799 ◽  
pp. 594-597
Author(s):  
Qiang Ke

A chaos communication system in semiconductor lasers is proposed. Based on the idea of drive-response synchronization, taking the one-way coupled external cavity semiconductor laser with feedback system as an example, we discuss the principle, numerical simulation of chaotic synchronization and analyze the laser parameter mismatch on the synchronization performance.


2008 ◽  
Vol 17 (01) ◽  
pp. 15-22 ◽  
Author(s):  
K. NAKKEERAN ◽  
P. K. A. WAI ◽  
L. XU ◽  
L. F. K. LUI ◽  
H. Y. TAM

Using Lang's equation for the dynamics of injection locking of a laser diode, we show that the hysteresis property of the excess carrier density has direct influence on the mode-shift characteristics, which makes the shift of the slave laser mode to be different from the frequency detune of the external master laser signal within the locking range of the slave laser. The theoretical prediction is experimentally confirmed by the measurement of the mode-shift of an injection locked Fabry-Perot laser diode.


2014 ◽  
Vol 2 ◽  
pp. 413-416
Author(s):  
Kenichi Arai ◽  
Susumu Shinohara ◽  
Satoshi Sunada ◽  
Kazuyuki Yoshimura ◽  
Takahisa Harayama ◽  
...  

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