COEXISTENCE OF DIFFERENT TYPES OF TRANSVERSE CONDUCTIVITY IN Y1-xPrxBa2Cu3 O7-δ SINGLE CRYSTALS WITH DIFFERENT PRASEODYMIUM CONCENTRATIONS

In this paper, the influence of praseodymium doping on the conductivity across (transverse) the basal plane of high-temperature superconducting Y 1-x Pr x Ba 2 Cu 3 O 7-δ single crystals is investigated. It is determined that an increase of praseodymium doping leads to increased localization effects and the implementation of a metal–insulator transition Y 1-x Pr x Ba 2 Cu 3 O 7-δ, which always precedes the superconducting transition. The increase of the praseodymium concentration also leads to a significant displacement of the point of the metal–insulator transition to the low temperature region.

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METAL–INSULATOR TRANSITION AND THE TEMPERATURE OF THE PSEUDOGAP ANOMALY OPENING IN PRASEODYMIUM DOPED Y1-zPrzBa2Cu3O7-δ SINGLE CRYSTALS

Modern Physics Letters B ◽

10.1142/s0217984913500292 ◽

2013 ◽

Vol 27 (04) ◽

pp. 1350029 ◽

Cited By ~ 6

Author(s):

R. V. VOVK ◽

Z. F. NAZYROV ◽

I. L. GOULATIS ◽

A. CHRONEOS ◽

V. M. PINTO SIMOES

Keyword(s):

Electrical Resistivity ◽

Single Crystals ◽

Insulator Transition ◽

Critical Regime ◽

Significant Shift ◽

Asymptotic Dependence ◽

Metal Insulator Transition ◽

Metal Insulator ◽

The One ◽

Praseodymium Doping

The influence of praseodymium doping on the electrical resistivity in the ab-plane of Y 1-z Pr z Ba 2 Cu 3 O 7-δ single crystals, is investigated. It is determined that as the concentration of praseodymium (0.0 ≤ z ≤ 0.5) is rising there occurs a significant shift of the temperature regions, corresponding to the metal–insulator transitions, as well as to the regime of the implementation of the pseudogap anomaly. The part of the curves related to the metal–insulator transition are well described by means of an asymptotic dependence that corresponds to the implementation of a quantum critical regime in the system, the so-called law of the "one third".

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Low temperature terahertz spectroscopy of n-InSb through a magnetic field driven metal-insulator transition

Applied Physics Letters ◽

10.1063/1.2356105 ◽

2006 ◽

Vol 89 (12) ◽

pp. 122108 ◽

Cited By ~ 3

Author(s):

X. P. A. Gao ◽

J. Y. Sohn ◽

S. A. Crooker

Keyword(s):

Magnetic Field ◽

Low Temperature ◽

Terahertz Spectroscopy ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator

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The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition

Solid-State Electronics ◽

10.1016/0038-1101(85)90215-1 ◽

1985 ◽

Vol 28 (1-2) ◽

pp. 93-99 ◽

Cited By ~ 7

Author(s):

W.N. Shafarman ◽

T.G. Castner ◽

J.S. Brooks ◽

K.P. Martin ◽

M.J. Naughton

Keyword(s):

Low Temperature ◽

Insulator Transition ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Doped Silicon

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Electroresistance Effect due to Mo Substitution at Mn-Site in Monovalent Doped La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) Manganites

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.317.17 ◽

2021 ◽

Vol 317 ◽

pp. 17-21

Author(s):

Muhammad Syazwan Mohd Sabri ◽

Nur Ain Athirah Che Apandi ◽

Norazila Ibrahim

Keyword(s):

Transition Temperature ◽

Low Temperature ◽

Temperature Region ◽

Potential Application ◽

Insulator Transition ◽

Applied Current ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Magnetic Inhomogeneity ◽

Spintronic Devices

The electroresistance, ER effect of La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) samples prepared using solid method are investigated. The increased of applied current from 5 mA to 10 mA does not change the metal-insulator transition temperature, TMI for both samples however decreased the resistivity in the temperature region of 50 K – 300 K. Both samples exhibit large ER effect at low temperature region. At TMI, the ER value is 75.5% (x =0) and decrease to 34.15% (x = 0.05). However, at 300 K, the value of ER increases to 57 % for Mo substituted sample, and the value decreases to 6.4% for the x =0 sample. The enhanced ER effect at 300 K may be due to the growth of conductive filaments under increased applied current. The increase of applied current may perturb the arrangement of magnetic inhomogeneity induced by Mo substitution, result in reduction of resistivity and lead to the observation of ER effect. These findings suggest potential application of La0.85Ag0.15Mn1-xMoxO3 (x = 0.05) in spintronic devices.

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