The Transport Mechanism In The Heterostructure GaAs/AlGaAs At Very Low Temperature In The Vicinity Of The Metal Insulator Transition

2020 ◽  
Vol 1 (1) ◽  
pp. 067-073
Author(s):  
Asmaa Chakhmane ◽  
Hassan El Idrissi ◽  
Abdelhamid El Kaaouachi ◽  
Mohamed Errai
Keyword(s):  
Low Temperature ◽  
Transport Mechanism ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Very Low Temperature

The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition

1985 ◽  
Vol 28 (1-2) ◽  
pp. 93-99 ◽  
Author(s):  
W.N. Shafarman ◽  
T.G. Castner ◽  
J.S. Brooks ◽  
K.P. Martin ◽  
M.J. Naughton
Keyword(s):  
Low Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Doped Silicon

Electroresistance Effect due to Mo Substitution at Mn-Site in Monovalent Doped La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) Manganites

2021 ◽  
Vol 317 ◽  
pp. 17-21
Author(s):  
Muhammad Syazwan Mohd Sabri ◽  
Nur Ain Athirah Che Apandi ◽  
Norazila Ibrahim
Keyword(s):  
Transition Temperature ◽  
Low Temperature ◽  
Temperature Region ◽  
Potential Application ◽  
Insulator Transition ◽  
Applied Current ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Magnetic Inhomogeneity ◽  
Spintronic Devices

The electroresistance, ER effect of La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) samples prepared using solid method are investigated. The increased of applied current from 5 mA to 10 mA does not change the metal-insulator transition temperature, TMI for both samples however decreased the resistivity in the temperature region of 50 K – 300 K. Both samples exhibit large ER effect at low temperature region. At TMI, the ER value is 75.5% (x =0) and decrease to 34.15% (x = 0.05). However, at 300 K, the value of ER increases to 57 % for Mo substituted sample, and the value decreases to 6.4% for the x =0 sample. The enhanced ER effect at 300 K may be due to the growth of conductive filaments under increased applied current. The increase of applied current may perturb the arrangement of magnetic inhomogeneity induced by Mo substitution, result in reduction of resistivity and lead to the observation of ER effect. These findings suggest potential application of La0.85Ag0.15Mn1-xMoxO3 (x = 0.05) in spintronic devices.

A study of the elastic property at low temperature in the metal–insulator transition compound

2006 ◽  
Vol 378-380 ◽  
pp. 201-203
Author(s):  
Yoshiki Nakanishi ◽  
Masafumi Oikawa ◽  
Tomoaki Tanizawa ◽  
Tomoyuki Kumagai ◽  
Masahito Yoshizawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
Elastic Property ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films

2009 ◽  
Vol 615-617 ◽  
pp. 335-338
Author(s):  
Alexander A. Lebedev ◽  
Pavel L. Abramov ◽  
Nina V. Agrinskaya ◽  
Ven I. Kozub ◽  
Alexey N. Kuznetsov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Doping Level ◽  
Epitaxial Films ◽  
Insulator Transition ◽  
Structural Perfection ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Temperature Conductivity ◽  
Sic Films

n-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal--insulator transition occurs in the n-3C-SiC layer at concentrations Nd - Na ≤ 3 1017 cm-3.

COEXISTENCE OF DIFFERENT TYPES OF TRANSVERSE CONDUCTIVITY IN Y1-xPrxBa2Cu3 O7-δ SINGLE CRYSTALS WITH DIFFERENT PRASEODYMIUM CONCENTRATIONS

2013 ◽  
Vol 27 (27) ◽  
pp. 1350198 ◽  
Author(s):  
R. V. VOVK ◽  
N. R. VOVK ◽  
I. L. GOULATIS ◽  
A. CHRONEOS
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Single Crystals ◽  
Insulator Transition ◽  
Superconducting Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Different Types ◽  
Transverse Conductivity ◽  
Praseodymium Doping

In this paper, the influence of praseodymium doping on the conductivity across (transverse) the basal plane of high-temperature superconducting Y 1-x Pr x Ba 2 Cu 3 O 7-δ single crystals is investigated. It is determined that an increase of praseodymium doping leads to increased localization effects and the implementation of a metal–insulator transition Y 1-x Pr x Ba 2 Cu 3 O 7-δ, which always precedes the superconducting transition. The increase of the praseodymium concentration also leads to a significant displacement of the point of the metal–insulator transition to the low temperature region.

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