Improving the electrical properties of TiOx Schottky-type diode with an extra ZrO2 insulating layer

2021 ◽  
pp. 2150412
Author(s):  
Liping Fu ◽  
Xiaoqiang Song ◽  
Yonggang Li ◽  
Zewei Wu ◽  
Xiaolong Fan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Titanium Oxide ◽  
Promising Candidate ◽  
Insulating Layer ◽  
Alternative Approach ◽  
Schottky Type

Titanium oxide has been considered a promising candidate for Schottky-type diode application. In this paper, an alternative approach for improving electrical properties of TiO[Formula: see text]-based Schottky-type diode has been demonstrated. Compared with the Ag/TiO[Formula: see text]/Ti structure Schottky-type diode, by embedding an extra ZrO2 insulating layer between the Ag/TiO[Formula: see text] interface, an extremely high rectifying ratio of 109 can be obtained in the Ag/ZrO2/TiO[Formula: see text]/Ti structure device. The improvement of the electrical properties in the Ag/ZrO2/TiO[Formula: see text]/Ti structure device can be attributed to the localized formation of Ag metal conductive filaments in ZrO2 layer after switching on.

Toward an alternative approach for the preparation of low-temperature titanium dioxide blocking underlayers for perovskite solar cells

2019 ◽  
Vol 7 (17) ◽  
pp. 10729-10738 ◽  
Author(s):  
Su Htike Aung ◽  
Lichen Zhao ◽  
Kazuteru Nonomura ◽  
Than Zaw Oo ◽  
Shaik M. Zakeeruddin ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Solar Cells ◽  
Low Temperature ◽  
Titanium Oxide ◽  
Perovskite Solar Cells ◽  
Alternative Technique ◽  
Electrodeposition Method ◽  
Alternative Approach ◽  
Anodic Electrodeposition

The anodic electrodeposition method is investigated as an alternative technique for the preparation of a titanium oxide blocking underlayer for perovskite solar cells.

Structural and Electrical Properties of (1-x)Pb (Zry Ti1-y)O3-xSm(Fe3+0.5, Nb5+0.5)O3 Ceramics Prepared by Conventional Solid State Synthesis and Sintered at Low Temperature

2014 ◽  
Vol 87 ◽  
pp. 12-17
Author(s):  
Fares Kahoul ◽  
Louanes Hamzioui ◽  
Ahmed Boutarfaia
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Piezoelectric Properties ◽  
Piezoelectric Materials ◽  
Promising Candidate ◽  
Solid State Method ◽  
Conventional Solid State Method ◽  
Structural And Electrical Properties ◽  
Conventional Solid State Synthesis ◽  
Stable Solid Solution

The phase structure, microstructure and electrical properties of (1-x)Pb (ZryTi1-y)O3-xSm(Fe3+0.5,Nb5+0.5)O3(PZT–SFN) (with x = 2 %, 41%≤ y ≤57 %) piezoelectric ceramics were prepared by the conventional solid state method, and effects of SFN and the Zr/Ti ratio content on the piezoelectric properties of PZT ceramics were mainly investigated. A stable solid solution has been formed between PZT and SFN, and a morphotropic phase boundary of PZT–SFN ceramics is identified in the range of 51% ≤ y ≤55 %. The Curie temperature of PZT–SFN ceramics decreases with increasing at Zr/Ti ratio content. A higher εrvalue and a lower tanδ value are demonstrated for the PZT–SFN ceramics with y = 53 %. The PZT–SFN ceramics with y = 53 % has an enhanced electrical behavior of kp~ 61.2 %, Qm~ 104, εr~ 566, tanδ ~ 2.02 % and TC~ 370OC. As a result, PZT–SFN ceramics are promising candidate materials for the field of lead piezoelectric materials and piezoelectric device.

Original Electrospun Core-Shell Nanostructured Magnéli Titanium Oxide Fibers and their Electrical Properties

2014 ◽  
Vol 26 (17) ◽  
pp. 2654-2658 ◽  
Author(s):  
Vasana Maneeratana ◽  
David Portehault ◽  
Julien Chaste ◽  
Dominique Mailly ◽  
Markus Antonietti ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Titanium Oxide ◽  
Core Shell

Electrical Characterization of the Grain-Boundary Region of SnO2 Varistors

2006 ◽  
Vol 518 ◽  
pp. 235-240 ◽  
Author(s):  
M. Žunić ◽  
Z. Branković ◽  
G. Branković ◽  
D. Poleti
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Electric Fields ◽  
Electrical Characterization ◽  
Boundary Region ◽  
Current Voltage ◽  
Schottky Type ◽  
Boundary Properties ◽  
Current Voltage Characteristics

The effect of Co, Cr and Nb on the electrical properties of the grain boundaries of SnO2-based varistors was investigated. The powders were prepared by the method of evaporation and decomposition of solutions and suspensions. Varistor samples were obtained by uniaxial pressing followed by sintering at 1300 °C for 1h. The electrical properties of the grain-boundary region, such as resistance (R) and capacitance (C), were determined using ac impedance spectroscopy in the 27-330 °C temperature interval. Activation energies for conduction (EA) were calculated from the Arrhenius equation. The non-linear coefficients (α) and the breakdown electric fields (Eb) of the samples were determined from the current-voltage characteristics. The potential barrier height (Φb) was calculated using the Schottky-type conducting model. After a comparison of the characteristic parameters for different varistor compositions it was found that the Cr/Nb ratio has a crucial influence on the grain-boundary properties in SnO2 varistors.

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