A NOVEL ADAPTIVE CURRENT BIASED LINEAR RADIO-FREQUENCY POWER AMPLIFIER ON SIGE HBT PROCESS

2010 ◽  
Vol 19 (05) ◽  
pp. 1077-1088 ◽  
Author(s):  
TUO WU ◽  
HONGYI CHEN ◽  
DAHONG QIAN

A novel adaptive current biased CLASS-A/shallow AB RF power amplifier is demonstrated in this paper. By theoretical deduction, a prototype is described to improve the linearity of a linear PA. With the realization on Jazz 0.35 μm SiGe HBT process and test verification, the novel adaptive current biased RF power amplifier shows 3 ~ 7 dB improvement of the ACPR at the output power of 19 dBm to meet the demand of CDMA IS95 spectrum mask without debasing the efficiency.

Author(s):  
Md. Golam Sadeque ◽  
Zubaida Yusoff ◽  
Mardeni Roslee ◽  
Shaiful Jahari Hashim ◽  
Azah Syafiah Mohd Marzuki

The bandwidth of the wireless communication has increased due to the various applications of the wireless devices. A radio frequency power amplifier (RFPA) is one of the crucial components of the transceiver. So, to meet the requirement of the bandwidth, wideband RFPA is needed. The RFPA not only requires a wideband matching network but importantly the biasing network. For the next-generation communication system, a wideband biasing network is needed to operate in the wide GHz bandwidth range. In this paper, a wideband biasing network for the power amplifier is designed using a quarter-wave transmission line and a butterfly stub for the frequency band of 3.3 GHz to 4.3 GHz. Roger’s RO3006 is used as the substrate for the design of the biasing network. The designed network performed well in the required frequency range. The performances of the biasing network have shown 9 dB to 19 dB return loss, the radio frequency (RF) isolation has more than 35 dB, and 0 dB to 1.5 dB insertion loss. This wideband biasing network can be used for the next generation communication system.


2012 ◽  
Vol 236-237 ◽  
pp. 765-770
Author(s):  
Wen Yuan Li ◽  
Sheng Zheng

A SiGe HBT power amplifier for Time Division Synchronous Code-Division Multiple-Access (TD-SCDMA) application with a single positive 3.3V supply has been demonstrated in this paper by adopting a newly proposed usage of the bonding wire. Though the emitter bonding wire may decrease the power gain, it can also decrease the effect of the knee voltage, thus increase the efficiency of the power amplifier. The post-simulation result shows that it can exhibit a linear gain of 29dB, output power of 30dBm, power-added efficiency of 38.49%, and -43dBc suppression at the second harmonic for TD-SCDMA application.


Author(s):  
A. Joseph ◽  
M. McPartlin ◽  
H. Lafontaine ◽  
J. Forsyth ◽  
P. Candra ◽  
...  

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 244
Author(s):  
Mattia Mengozzi ◽  
Gian Piero Gibiino ◽  
Alberto M. Angelotti ◽  
Corrado Florian ◽  
Alberto Santarelli

While digital predistortion (DPD) usually targets only the linearity performance of the radio–frequency (RF) power amplifier (PA), this work addresses more than a single PA performance metric exploiting a multi-objective optimization approach. We present a predistorer learning procedure based on a constrained optimization algorithm that maximizes the RF output power, while guaranteeing a prescribed linearity level, i.e., a maximum normalized mean square error (NMSE) or adjacent-channel power ratio (ACPR). Experimental results on a Gallium Nitride (GaN) PA show that the proposed approach outperforms the classical indirect learning architecture (ILA), yet using the same predistorter structure with predetermined nonlinearity and memory orders.


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