EFFECTS OF QUANTUM CONFINEMENT ON LOW FREQUENCY NOISE IN δ-DOPED GaAs STRUCTURES GROWN BY MBE
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Low frequency noise (LFN) was measured in δ-doped GaAs structures in which the free carriers are confined to a 2-dimensional plane. Three samples grown at different temperatures, resulting in doping layers of a different thickness, are used to study the effects of quantum confinement on the LFN. We observed both 1/f noise and generation-recombination noise components. We find that a stronger quantum confinement results in a bigger Hall mobility and a lower magnitude of the 1/f noise.
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HEMTs for low-power and low-frequency noise 4.2 K cryoelectronics : fabrication and characterization
1998 ◽
Vol 08
(PR3)
◽
pp. Pr3-131-Pr3-134
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1999 ◽
2002 ◽
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