EFFECTS OF QUANTUM CONFINEMENT ON LOW FREQUENCY NOISE IN δ-DOPED GaAs STRUCTURES GROWN BY MBE

2002 ◽  
Vol 02 (01) ◽  
pp. L37-L45
Author(s):  
X. Y. CHEN ◽  
P. M. KOENRAAD

Low frequency noise (LFN) was measured in δ-doped GaAs structures in which the free carriers are confined to a 2-dimensional plane. Three samples grown at different temperatures, resulting in doping layers of a different thickness, are used to study the effects of quantum confinement on the LFN. We observed both 1/f noise and generation-recombination noise components. We find that a stronger quantum confinement results in a bigger Hall mobility and a lower magnitude of the 1/f noise.

1974 ◽  
Vol 52 (5) ◽  
pp. 399-401
Author(s):  
Y. K. Sharma

An analytical expression for the spectral intensity of low frequency noise voltage, based on the method of regional approximation, has been calculated for the trap free insulated diode containing thermal free carriers; while current is equal or greater than the critical value. It is shown that the value of noise in the potential minimum gives a very small contribution to the total noise.


Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  

1999 ◽  
Author(s):  
Charles K. Birdsall ◽  
J. P. Varboncoeur ◽  
P. J. Christensen

2021 ◽  
Vol 182 ◽  
pp. 108203
Author(s):  
Lígia T. Silva ◽  
Alda Magalhães ◽  
José Ferreira Silva ◽  
Fernando Fonseca

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