GEOMETRY AND BIAS DEPENDENCE OF LOW-FREQUENCY RANDOM TELEGRAPH SIGNAL AND 1/f NOISE LEVELS IN MOSFETS

2005 ◽  
Vol 05 (04) ◽  
pp. L539-L548 ◽  
Author(s):  
MASATO TOITA ◽  
LODE K. J. VANDAMME ◽  
SHIGETOSHI SUGAWA ◽  
AKINOBU TERAMOTO ◽  
TADAHIRO OHMI
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Gate Bias ◽  
Low Frequency Noise ◽  
Noise Levels ◽  
Temperature Plasma ◽  
Random Telegraph Signal ◽  
Carrier Traps ◽  
Inherent Nature ◽  
Bias Condition

Low-frequency noise in MOSFETs is considered to originate from two distinctive sources: Random Telegraph Signal caused by carrier traps at the border of the SiO 2/ Si interface and 1/f fluctuation due to inherent nature of lattice scattering in a Si crystal. It is very important to distinguish these two mechanisms. Relative amplitude of RTS and 1/f noise depends on the number of carriers under the gate electrode, which makes it channel size as well as gate-bias dependent. In this paper, we discuss the dependence of the amplitudes of RTS and 1/f noise in MOSFETs on sample geometry and gate bias condition. We discuss low-frequency noise reduction by utilizing low electron-temperature plasma for gate oxidation as well.

Recurrence Plot Analysis of HRV for Exposure to Low-Frequency Noise

2014 ◽  
Vol 1044-1045 ◽  
pp. 1251-1257 ◽  
Author(s):  
Shih Tsung Chen ◽  
Chia Yi Chou ◽  
Li Ho Tseng
Keyword(s):  
Low Frequency ◽  
Cardiovascular Responses ◽  
Recurrence Plot ◽  
Frequency Noise ◽  
Cardiovascular Activity ◽  
Low Frequency Noise ◽  
Noise Levels ◽  
Noise Condition ◽  
Plot Analysis ◽  
Recurrence Plot Analysis

Previous studies have indicated that the chronic effects of exposure to low-frequency noise causes annoyance. However, during the past two decades, most studies have employed questionnaires to characterize the effects of noise on psychosomatic responses. This study investigated cardiovascular activity changes in exposure to low-frequency noise for various noise intensities by using recurrence plot analysis of heart rate variability (HRV) estimation. The authors hypothesized that distinct noise intensities affect cardiovascular activity, which would be reflected in the HRV and recurrence quantification analysis (RQA) parameters. The test intensities of noises were no noise, 70-dBC, 80-dBC, and 90-dBC. Each noise level was sustained for 5 min, and the electrocardiogram (ECG) was recorded simultaneously. The cardiovascular responses were evaluated using RQA of the beat-to-beat (RR) intervals obtained from ECG signals. The results showed that the mean RR interval variability and mean blood pressure did not substantially change relative to the noise levels. However, the length of the longest diagonal line (Lmax) of the RQA of the background noise (no noise) condition was significantly lower than the 70-dBC, 80-dBC, and 90-dBC noise levels. The laminarity showed significant changes in the noise levels of various intensities. In conclusion, the RQA-based measures appear to be an effective tool for exposure to low-frequency noise, even in short-term HRV time series.

Study of Gate Oxide/Channel Interface Properties of SON MOSFETs by Random Telegraph Signal and Low Frequency Noise

2011 ◽  
Vol 10 (3) ◽  
pp. 402-408 ◽  
Author(s):  
M'hamed Trabelsi ◽  
Liviu Militaru ◽  
Nabil Sghaier ◽  
Andrea Savio ◽  
Stephane Monfray ◽  
...  
Keyword(s):  
Low Frequency ◽  
Gate Oxide ◽  
Frequency Noise ◽  
Interface Properties ◽  
Low Frequency Noise ◽  
Random Telegraph Signal

Annoyance Due to Environmental Low Frequency Noise and Source Location — A Case Study

1989 ◽  
Vol 8 (2) ◽  
pp. 30-39 ◽  
Author(s):  
R.N. Vasudevan ◽  
H.G. Leventhall
Keyword(s):  
Field Study ◽  
Microphone Array ◽  
Low Frequency ◽  
Source Location ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Levels ◽  
Industrial Source

This case study shows that objective criteria usually based solely on the dB(A) scale are not adequate in evaluating the annoyance due to low frequency noise. Levels which are often low enough to discount the likelihood of a noise nuisance, however, were found to be subjectively annoying. The field study reported here demonstrates that the complainant's annoyance response was due more to the unpleasant nature of the low frequency noise than to its actual level. Positive location of a distant industrial source with the aid of a specially designed three element microphone array provided much needed relief to the complainant.

Analysis of noise properties of an optocoupler device

2007 ◽  
Vol 15 (3) ◽  
Author(s):  
A. Konczakowska ◽  
J. Cichosz ◽  
A. Szewczyk ◽  
B. Stawarz
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Random Telegraph Signal ◽  
Signal Noise ◽  
Rts Noise

AbstractIn the paper, localization of a source of random telegraph signal noise (RTS noise) in optocoupler devices of CNY 17 type was defined. The equivalent noise circuit in low frequency noise for these types of optocouplers was proposed.

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