EXCESS LOW FREQUENCY NOISE IN SINGLE-WALL CARBON NANOTUBE

2006 ◽  
Vol 06 (01) ◽  
pp. L45-L55 ◽  
Author(s):  
S. SOLIVERES ◽  
A. HOFFMANN ◽  
F. PASCAL ◽  
C. DELSENY ◽  
M. S. KABIR ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Noise Measurements ◽  
Nanotube Defects

Low frequency noise measurements have been performed on a single-wall carbon nanotube connected by Ti/Au electrodes. It has been found that the 1/f noise decreases when the measurements are undertaken under vacuum and when the nanotube is partially degassed, showing a correlation between the fluctuation inducing the 1/f noise and the presence of gases. We show that the 1/f noise sources are located at the metal/nanotube contacts. When the device is annealed under vacuum at 450K, some Lorentzian shapes are observable and can be related to nanotube defects or to strongly bound molecules.

Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise

2013 ◽  
Vol 740-742 ◽  
pp. 934-937
Author(s):  
Hua Khee Chan ◽  
Rupert C. Stevens ◽  
Jonathan P. Goss ◽  
Nicholas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Spectral Density ◽  
Power Spectral Density ◽  
Low Frequency ◽  
Frequency Noise ◽  
Noise Power ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Noise Power Spectral Density ◽  
Power Spectral ◽  
Noise Measurements

Two sets of 4H-SiC signal-lateral JFETs were thermally aged at 400°C and 500°C in furnaces open to air for 1000 hours. I"-" V and low frequency noise measurements were performed on these devices and the results were compared against the as-fabricated sample. The data from I"-" V characterisation demonstrates that the linear and saturated drain-source current decreases monotonically with stress temperature. In addition, the linear characteristics of the JFETs have shifted approximately 1.5V along the drain-source voltage axis. Whilst the devices thermally aged at 400°C show no degradation in magnitude and behaviour in Noise Power Spectral Density (NPSD), the NPSD of 500°C stressed devices has increase approximately 30dB and it shows a full frequency spectrum of 1/ƒ dependency up to 100 kHz. A further investigation of the noise origin reveals that the Normalised Noise Power Spectral Density (NNPSD) of the aged sample is directly proportional to RDSwhich is similar to the as-fabricated sample. Thus we hypothesize that the existing noise sources have intensified possibly due to the evolution of defects.

scholarly journals LOW-FREQUENCY NOISE MEASUREMENTS OF IR PHOTODETECTORS WITH VOLTAGE CROSS CORRELATION SYSTEM

Measurement ◽  
2021 ◽  
pp. 109867
Author(s):  
Krzysztof ACHTENBERG ◽  
Janusz MIKOŁAJCZYK ◽  
Carmine CIOFI ◽  
Graziella SCANDURRA ◽  
Krystian MICHALCZEWSKI ◽  
...  
Keyword(s):  
Cross Correlation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Ir Photodetectors ◽  
Noise Measurements ◽  
Correlation System

Low frequency noise sources in AlGaN/GaN HEMTs

1999 ◽  
Author(s):  
J. A. Garrido ◽  
F. Calle ◽  
E. Muñoz ◽  
I. Izpura ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Gan Hemts
Sign in / Sign up

Export Citation Format

Share Document