TUNING OF EMISSION WAVELENGTH OF InAs/GaAs QUANTUM DOTS SANDWICHED BY COMBINATION LAYERS

2006 ◽  
Vol 05 (06) ◽  
pp. 847-852
Author(s):  
ZHIDAN FANG ◽  
ZHENG GONG ◽  
ZHENHUA MIAO ◽  
ZHICHUAN NIU
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Buffer Layer ◽  
Peak Position ◽  
Emission Peak ◽  
Emission Wavelength ◽  
Light Sources ◽  
Self Assembled

We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 μm. The density of the QDs is increased to 1.17 × 1010 cm -2. It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs -based 1.3 μm light sources.

Dense arrays of site-controlled quantum dots with tailored emission wavelength: Growth mechanisms and optical properties

2017 ◽  
Vol 111 (22) ◽  
pp. 221102 ◽  
Author(s):  
Alessandro Surrente ◽  
Marco Felici ◽  
Pascal Gallo ◽  
Alok Rudra ◽  
Benjamin Dwir ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Emission Wavelength ◽  
Growth Mechanisms ◽  
Dense Arrays

Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD

2005 ◽  
Vol 26 (1-4) ◽  
pp. 81-85 ◽  
Author(s):  
Y. Sakuma ◽  
K. Takemoto ◽  
S. Hirose ◽  
T. Usuki ◽  
N. Yokoyama
Keyword(s):  
Quantum Dots ◽  
Emission Wavelength ◽  
Self Assembled

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

Electrical and optical properties of self-assembled InAs quantum dots in InP studied by space-charge spectroscopy and photoluminescence

2000 ◽  
Vol 61 (7) ◽  
pp. 4795-4800 ◽  
Author(s):  
H. Pettersson ◽  
C. Pryor ◽  
L. Landin ◽  
M.-E. Pistol ◽  
N. Carlsson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Space Charge ◽  
Electrical And Optical Properties ◽  
Inas Quantum Dots ◽  
Self Assembled
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