Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

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Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

Thin Solid Films ◽

10.1016/j.tsf.2006.07.097 ◽

2007 ◽

Vol 515 (10) ◽

pp. 4344-4347 ◽

Cited By ~ 8

Author(s):

H.S. Djie ◽

D.-N. Wang ◽

B.S. Ooi ◽

J.C.M. Hwang ◽

X.-M. Fang ◽

...

Keyword(s):

Quantum Dots ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Emission Wavelength ◽

Self Assembled

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Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1−xAs(0⩽x⩽0.3) layer

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)00989-7 ◽

2001 ◽

Vol 227-228 ◽

pp. 1062-1068 ◽

Cited By ~ 9

Author(s):

Zhichuan Niu ◽

Xiaodong Wang ◽

Zhenhua Miao ◽

Songlin Feng

Keyword(s):

Quantum Dots ◽

Emission Wavelength ◽

Self Assembled

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TUNING OF EMISSION WAVELENGTH OF InAs/GaAs QUANTUM DOTS SANDWICHED BY COMBINATION LAYERS

International Journal of Nanoscience ◽

10.1142/s0219581x0600525x ◽

2006 ◽

Vol 05 (06) ◽

pp. 847-852

Author(s):

ZHIDAN FANG ◽

ZHENG GONG ◽

ZHENHUA MIAO ◽

ZHICHUAN NIU

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

Buffer Layer ◽

Peak Position ◽

Emission Peak ◽

Emission Wavelength ◽

Light Sources ◽

Self Assembled

We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 μm. The density of the QDs is increased to 1.17 × 1010 cm -2. It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs -based 1.3 μm light sources.

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