STM/STS STUDIES OF THE INITIAL STAGE OF GROWTH OF ULTRA-THIN Bi FILMS ON 7 × 7-Si(111) SURFACE
2007 ◽
Vol 06
(05)
◽
pp. 399-401
◽
Keyword(s):
The results of investigation of the room temperature growth of thin Bi films on Si (111)-7 × 7 are present. In the initial stage of Bi film growth the rotationally disordered, pseudo-cubic, Bi {012} islands with a uniform height of 13 Å are formed. With increasing bismuth on the surface, islands interconnect, maintaining however their uniform height, and structural phase transition of the {012} film into a hexagonal Bi (001) film takes place.
2000 ◽
Vol 55
(9-10)
◽
pp. 759-764
◽
2016 ◽
Vol 4
(4)
◽
pp. 780-792
◽
1985 ◽
Vol 24
(S2)
◽
pp. 255
◽
2016 ◽
Vol 238
◽
pp. 109-112
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Keyword(s):
1979 ◽
Vol 12
(20)
◽
pp. 4179-4183
◽
1977 ◽
Vol 33
(6)
◽
pp. 1773-1780
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