Substrate and DLARC Layers Selection for High Efficiency Solar Cell

2019 ◽  
Vol 18 (01) ◽  
pp. 1850012 ◽  
Author(s):  
M. Ismail Fathima ◽  
K. S. Joseph Wilson
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Light Trapping ◽  
Substrate Material ◽  
Antireflective Coating ◽  
Angle Of Incidence ◽  
Si Substrate ◽  
Optical Losses ◽  
Near Ir ◽  
Selection For

Optical losses are one of the important parameters that affect the efficiency of solar cell. Various light-trapping techniques are used to reduce the optical losses, especially reflectivity loss. Antireflective coating (ARC) is used to reduce the reflectivity losses in the solar cell. In this paper, we have analyzed the reflectivity of double layer ARC (DLARC) in the solar cell using transfer matrix method. The reflectivity of various combinations of DLARC materials with a suitable substrate material is analyzed in the visible and near IR region. It is found that ZnS/Ge DLARC on Si substrate solar cell provides minimum reflectance in the range of wavelength 550–950[Formula: see text]nm. It is also found that zero reflectance occurs at 550[Formula: see text]nm. This minimum reflectance also depends on the angle of incidence. Here it is continuously maintained up to the angle of incidence from 0[Formula: see text] to 20[Formula: see text]. From these investigations, it is concluded that ZnS/Ge DLARC is one of the suitable DLARCs on Si substrate in 550–950[Formula: see text]nm range of wavelength.

Efficiency enhancement of silicon solar cell using effective interface face method in antireflective coating layers

2020 ◽  
Vol 31 (05) ◽  
pp. 2050076
Author(s):  
M. Ismail Fathima ◽  
K. S. Joseph Wilson
Keyword(s):  
Solar Cell ◽  
Internal Quantum Efficiency ◽  
Light Trapping ◽  
Generation Rate ◽  
Antireflective Coating ◽  
Multiple Reflections ◽  
Carrier Generation ◽  
Arc Model ◽  
Fabry Perot ◽  
Narrow Spectral Range

Carrier generation is one of the important processes in solar cell operations. The generation rate depends on the number of photons absorbed by solar cell. This absorption of photons is affected by the reflection losses. The light trapping technique is used to minimize the reflection loss. In this work, a theoretical design of Effective Interface Antireflective Coating (EI-ARC) in solar cell is proposed which is based on the theory of Fabry–Perot interference filters. This design is composed of a space index layer with two subsystems of multilayer, which allows multiple reflections within it. It is shown that the combination of this two systems yields high transmission values over a narrow spectral range. This EI-ARC model increases the Internal Quantum Efficiency (IQE) and carrier generation rate of solar cell. These parameters are significant to raise the efficiency of the solar cell.

scholarly journals III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
Nikhil Jain ◽  
Mantu K. Hudait
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Si Substrate ◽  
Future Outlook ◽  
Si Solar Cells ◽  
Multijunction Solar Cells ◽  
The Future ◽  
Multijunction Solar Cell

AbstractAchieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III–V compound semiconductor based solar cells have steadily shown performance improvement at ~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III–V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III–V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III–V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III–V-on-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III–V multijunction solar cells on Si are reviewed. Different technological routes for integrating III–V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III–V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III–V solar cell efficiencies, the future prospects for successful integration of III–V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

scholarly journals Block Textured a-Si:H Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Seung Jae Moon ◽  
Chang Min Keum ◽  
Ju-Yeon Kim ◽  
Jin Kuk Kim ◽  
Byung Seong Bae
Keyword(s):  
Solar Cell ◽  
Glass Substrate ◽  
High Efficiency ◽  
Light Trapping ◽  
Steep Slope ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Block Height ◽  
Etching Profile ◽  
Glass Etching

A series of etching experiments on light trapping structure have been carried out by glass etching. The block structure provides long light traveling path and a constant distance between the cathode and anode electrodes regardless of the block height, which results in higher efficiency of the block textured solar cell. In terms of etching profile of the glass substrate, the addition of NH4F resulted in the smooth and clean etching profile, and the steep slope of the block was obtained by optimizing the composition of etching solution. For a higher HF concentration, a more graded slope was obtained and the addition of HNO3and NH4F provided steep slope and clean etching profile. The effects of the block textured glass were verified by a comparison of the solar cell efficiency. For the textured solar cell, the surface was much rougher than that of the plain glass, which also contributes to the improvement of the efficiency. We accomplished block shaped light trapping structure for the first time by wet etching of the glass substrate, which enables the high efficiency thin film solar cell with the aid of the good step coverage deposition.

scholarly journals Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
O. Durand ◽  
S. Almosni ◽  
Y. Ping Wang ◽  
C. Cornet ◽  
A. Létoublon ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Early Stage ◽  
Building Blocks ◽  
Bandgap Energy ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Tandem Solar Cells ◽  
Perfect Lattice ◽  
Current Matching

AbstractGaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-nitride alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtain defect-free GaP/Si pseudo-substrates suitable for the subsequent GaAsPN top junctions growth. Result shows that a double-step growth procedure suppresses most of the microtwins and a bi-stepped Si buffer can be grown, suitable to reduce the anti-phase domains density. We also review our recent progress in materials development of the GaAsPN alloy and our recent studies of all the different building blocks toward the development of a PIN solar cell. GaAsPN alloy with energy bandgap around 1.8 eV, lattice matched with the Si substrate, has been achieved. This alloy displays efficient photoluminescence at room temperature and good light absorption. An early-stage GaAsPN PIN solar cell prototype has been grown on a GaP(001) substrate. The external quantum efficiency and the

Simulation and investigation of perovskite/nano-pyramidal GeSe solar cell: Realizing high efficiency by controllable light trapping

Solar Energy ◽  
2021 ◽  
Vol 214 ◽  
pp. 310-318
Author(s):  
Masoud Aliyariyan ◽  
Davood Fathi ◽  
Mehdi Eskandari ◽  
Mohammad Hosein Mohammadi
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Light Trapping

Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell

1995 ◽  
Vol 196-201 ◽  
pp. 1779-1784 ◽  
Author(s):  
T. Soga ◽  
M Yang ◽  
Tomohisa Kato ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Si Substrate ◽  
Dislocation Reduction

scholarly journals Design and Validation of Multidimensional Hybrid Metamaterial Embedded Light Trapping Structure for p-Si/n-ZnO Based Thin c-Si Solar Cell

2021 ◽  
Author(s):  
Arijit Bardhan Roy
Keyword(s):  
Solar Cell ◽  
Light Trapping ◽  
Active Material ◽  
Cost Effective ◽  
Hybrid Structure ◽  
Angle Of Incidence ◽  
Simulation Studies ◽  
Reflective Coating ◽  
Optical Responses ◽  
Hybrid Metamaterial

Abstract This paper deals with one competent light trapping structure of metamaterials embedded p-Si/n-ZnO based thin solar cell assisted by different simulation studies. Through this article, author exposed the credibility of ZnO as multidimensional material with dual utility to serve as anti reflective coating with active material of this hetero-junction solar cell. Additionally, dielectric metamaterial like silica nanoparticles on top of the structure enhanced the photon cultivation efficiency of the device. Further through this work try to validate the simulated structure in real world by the process of simple fabrication technique which also offer same optical responses already given by theoretical studies. This investigation also confirms the metamaterial property of the monolayer silica nanopartcles in higher angle of incidence of light which validate its utility in solar cell where injection of photon was needed throughout the day. During the analysis of electric field and reflectance profiles generated by mentioned light trapping structure, it is very recognizable that, in future this type of hybrid structure which is combination of semiconductor with metamaterials will make solar cell more efficient and cost effective.

Technologies to Reduce Optical Losses of Silicon Solar Cells

2014 ◽  
Vol 953-954 ◽  
pp. 91-94
Author(s):  
Yu Qin Gu ◽  
Chun Rong Xue ◽  
Ming Liang Zheng
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Light Trapping ◽  
Short Circuit ◽  
Surface Texturing ◽  
Short Circuit Current ◽  
Optical Path Length ◽  
Silicon Solar Cells ◽  
Optical Losses ◽  
Top Contact

Optical losses chiefly effect the power from a solar cell by lowering the short-circuit current. There are a number of ways to reduce the optical losses, which includes top contact coverage of the cell surface can be minimized, anti-reflection coatings can be used on the top surface of the cell, reflection can be reduced by surface texturing, and the optical path length in the solar cell may be increased by a combination of surface texturing and light trapping. This work discusses all of the methods to reduce optical losses of silicon solar cells. Surface texturing, either in combination with an anti-reflection coating or by itself, can be used to minimize reflection, but the large reflection loss can be reduced significantly via a suitable anti-reflecting coatings. Significant improvement of the short circuit current after light trapping design was observed. In addition to these methods, top contact design of silicon solar cells is important. The design of the top contact involves the minimization of the finger and busbar resistance, and the overall reduction of losses associated with the top contact.

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