scholarly journals Design and Validation of Multidimensional Hybrid Metamaterial Embedded Light Trapping Structure for p-Si/n-ZnO Based Thin c-Si Solar Cell

2021 ◽  
Author(s):  
Arijit Bardhan Roy
Keyword(s):  
Solar Cell ◽  
Light Trapping ◽  
Active Material ◽  
Cost Effective ◽  
Hybrid Structure ◽  
Angle Of Incidence ◽  
Simulation Studies ◽  
Reflective Coating ◽  
Optical Responses ◽  
Hybrid Metamaterial

Abstract This paper deals with one competent light trapping structure of metamaterials embedded p-Si/n-ZnO based thin solar cell assisted by different simulation studies. Through this article, author exposed the credibility of ZnO as multidimensional material with dual utility to serve as anti reflective coating with active material of this hetero-junction solar cell. Additionally, dielectric metamaterial like silica nanoparticles on top of the structure enhanced the photon cultivation efficiency of the device. Further through this work try to validate the simulated structure in real world by the process of simple fabrication technique which also offer same optical responses already given by theoretical studies. This investigation also confirms the metamaterial property of the monolayer silica nanopartcles in higher angle of incidence of light which validate its utility in solar cell where injection of photon was needed throughout the day. During the analysis of electric field and reflectance profiles generated by mentioned light trapping structure, it is very recognizable that, in future this type of hybrid structure which is combination of semiconductor with metamaterials will make solar cell more efficient and cost effective.

Comparison of Light Trapping Limits Derived Using Various Methods for Thin Film GaAs Solar Cells

2020 ◽  
Vol 20 (6) ◽  
pp. 3939-3942
Author(s):  
Nikhil Deep Gupta
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Light Trapping ◽  
Cell Structure ◽  
Active Material ◽  
Thin Film Solar Cells ◽  
Maximum Efficiency ◽  
Solar Cell Structure ◽  
Limiting Values

The paper discusses and compares the Lambertian limits for light trapping (LT) in GaAs active layer based thin film solar cells as described by different mathematical theories and expressions. The Lambertian limits for thin film GaAs solar cell provide the maximum efficiency that can be achieved through LT structures and also indicate the advantage that these structure can provide for the design of GaAs thin film solar cell structure. The purpose to discuss difference Lambertian limit expressions is to understand and predict, which limiting benchmark value is more suited for nano LT structures based GaAs active material solar cells, considering GaAs material properties. The paper also compares these calculated limiting values with different nano LT structures including photonic crystal structures based designs proposed by the author. The aim is to check how much close a particular proposed structure is to the Lambertian values, so that we can predict that which is more suitable design to get best efficiency out of the single junction GaAs material based structure. The paper discussed the three Lambertian theories including that of Yablonovitch, Green and Schuster.

Substrate and DLARC Layers Selection for High Efficiency Solar Cell

2019 ◽  
Vol 18 (01) ◽  
pp. 1850012 ◽  
Author(s):  
M. Ismail Fathima ◽  
K. S. Joseph Wilson
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Light Trapping ◽  
Substrate Material ◽  
Antireflective Coating ◽  
Angle Of Incidence ◽  
Si Substrate ◽  
Optical Losses ◽  
Near Ir ◽  
Selection For

Optical losses are one of the important parameters that affect the efficiency of solar cell. Various light-trapping techniques are used to reduce the optical losses, especially reflectivity loss. Antireflective coating (ARC) is used to reduce the reflectivity losses in the solar cell. In this paper, we have analyzed the reflectivity of double layer ARC (DLARC) in the solar cell using transfer matrix method. The reflectivity of various combinations of DLARC materials with a suitable substrate material is analyzed in the visible and near IR region. It is found that ZnS/Ge DLARC on Si substrate solar cell provides minimum reflectance in the range of wavelength 550–950[Formula: see text]nm. It is also found that zero reflectance occurs at 550[Formula: see text]nm. This minimum reflectance also depends on the angle of incidence. Here it is continuously maintained up to the angle of incidence from 0[Formula: see text] to 20[Formula: see text]. From these investigations, it is concluded that ZnS/Ge DLARC is one of the suitable DLARCs on Si substrate in 550–950[Formula: see text]nm range of wavelength.

A recent overview on the porphyrin-based π-extended small molecules as donors and acceptors for high-performance organic solar cells

2021 ◽  
Author(s):  
Venkatesh Piradi ◽  
Feng Yan ◽  
Xunjin Zhu ◽  
Wai-Yeung Raymond Wong
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Small Molecules ◽  
Organic Solar Cells ◽  
High Performance ◽  
Cost Effective ◽  
Effective Alternative ◽  
The Past ◽  
Cost Effective Alternative ◽  
Silicon Based

Organic solar cells (OSCs) have been considered as a promising cost-effective alternative to silicon-based solar cell counterparts due to their lightweight, mechanical flexibility, and easy fabrication features. Over the past...

scholarly journals Solid-State Solar Cells Based on TiO2 Nanowires and CH3NH3PbI3 Perovskite

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 404
Author(s):  
Abdul Sami ◽  
Arsalan Ansari ◽  
Muhammad Dawood Idrees ◽  
Muhammad Musharraf Alam ◽  
Junaid Imtiaz
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Light Trapping ◽  
Active Material ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Tio2 Nanowires

Perovskite inorganic-organic solar cells are fabricated as a sandwich structure of mesostructured TiO2 as electron transport layer (ETL), CH3NH3PbI3 as active material layer (AML), and Spiro-OMeTAD as hole transport layer (HTL). The crystallinity, structural morphology, and thickness of TiO2 layer play a crucial role to improve the overall device performance. The randomly distributed one dimensional (1D) TiO2 nanowires (TNWs) provide excellent light trapping with open voids for active filling of visible light absorber compared to bulk TiO2. Solid-state photovoltaic devices based on randomly distributed TNWs and CH3NH3PbI3 are fabricated with high open circuit voltage Voc of 0.91 V, with conversion efficiency (CE) of 7.4%. Mott-Schottky analysis leads to very high built-in potential (Vbi) ranging from 0.89 to 0.96 V which indicate that there is no depletion layer voltage modulation in the perovskite solar cells fabricated with TNWs of different lengths. Moreover, finite-difference time-domain (FDTD) analysis revealed larger fraction of photo-generated charges due to light trapping and distribution due to field convergence via guided modes, and improved light trapping capability at the interface of TNWs/CH3NH3PbI3 compared to bulk TiO2.

Modifications in Morphology Resulting from Nanoimprinting Bulk Heterojunction Blends for Light Trapping Organic Solar Cell Designs

2013 ◽  
Vol 5 (16) ◽  
pp. 8225-8230 ◽  
Author(s):  
John R. Tumbleston ◽  
Abay Gadisa ◽  
Yingchi Liu ◽  
Brian A. Collins ◽  
Edward T. Samulski ◽  
...  
Keyword(s):  
Solar Cell ◽  
Organic Solar Cell ◽  
Bulk Heterojunction ◽  
Light Trapping

DISPERSION OF COBALT FERRITE FUNCTIONALIZED GRAPHENE NANOPLATELETS IN PLA FOR EMI SHIELDING APPLICATIONS

2021 ◽  
Author(s):  
KANAT ANURAKPARADORN ◽  
ALAN TAUB ◽  
ERIC MICHIELSSEN
Keyword(s):  
Functional Groups ◽  
Electromagnetic Interference ◽  
High Speed ◽  
Magnetic Particles ◽  
Cobalt Ferrite ◽  
Reduction Process ◽  
Cost Effective ◽  
Graphene Nanoplatelets ◽  
Angle Of Incidence ◽  
Emi Shielding

The proliferation of wireless technology calls for the development of cost-effective Electromagnetic Interference (EMI) shielding materials that reduce the susceptibility of high-speed electronic circuits to undesired incoming radiation. Ideally, such materials offer protection over wide frequency ranges and are insensitive to the polarization or angle of incidence of the impinging fields. Here, next-generation EMI shielding materials composed of polymer composites with conductive and magnetic fillers are introduced. It is shown that careful control of the concentration and dispersion of the polymers’ conductive and magnetic constituents permits tuning of the composites’ intrinsic electrical and magnetic properties. The resulting EMI shields are lightweight, cheap and offer greater protection than traditional metal gaskets and foams. In this work, cobalt ferrite magnetic nanoparticles (CoFe2O4) decorated on graphene-based material were dispersed in polylactic acid (PLA) matrix for high EM absorption level in X-band (8-12 GHz). The decoration of the magnetic particles was performed on the as-prepared conductive graphene nanoplatelets (GNP) and reduced graphene oxide (rGO). GNP composites exhibited higher DC conductivity, and permittivity than rGO composites. This is attributed to issues associated with the reduction process, including a lack of conductivity due to the insulated oxygen functional groups and the reduction in the lateral size. Compared with rGOs, the lack of out-plane functional groups causes the cobalt ferrite nanoparticles to agglomerate and not cover the entire surface of the GNPs. These morphological differences improve the magnetization and EM absorption of the composite system. The compatibilizer (pyrene-PLA-OH) was added to the composites to enhance dispersion of the GNPs in the polymer matrix which benefits in higher absorption of the shield. The influence of the compatibilizer on parameter, the reflection loss (RL) of the composite were determined from the characterized intrinsic properties

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