The investigation of broad-absorbing tetrabenzocorrolazine dye-based black matrix of low dielectric constant

2020 ◽  
Vol 24 (10) ◽  
pp. 1198-1207
Author(s):  
Jun Choi
Keyword(s):  
Dielectric Constant ◽  
Thin Film Transistor ◽  
Vertical Direction ◽  
Critical Factor ◽  
Color Filter ◽  
Low Dielectric Constant ◽  
Main Body ◽  
Color Strength ◽  
Low Dielectric ◽  
Perylene Dye

Tetrabenzocorrolazine dyes with high color strength and broad absorbance derived from a phthalocyanine moiety were designed and synthesized for a color filter on an array-mode black matrix of low dielectric constant. The prepared tetrabenzocorrolazine dyes focused the absorbance of phthalocyanine further into the visible light range so that the color was considerably closer to black, while making it easier to introduce an axial substituent in the vertical direction to the dye main body, thereby markedly improving its solubility in industrial solvents. Upon mixing with a perylene dye of 450-550 nm absorbance and a thermosetting resin composition, dye-based black matrix films with high optical density values, associated with superior light shielding capability, were fabricated. The prepared black matrix films not only ensured thermal resistance by allowing easy intermolecular cohesion but also served as an insulating membrane that did not interfere with the thin film transistor electric signals, exhibiting a value of 3-5 when dielectricity was measured as the most critical factor for the color filter on array mode display panels.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Defect free monolayer and bilayer graphene exfoliated by solvent with low dielectric constant

2020 ◽  
Author(s):  
Vedanki ◽  
Chandrabhan Dohare ◽  
Pawan KumarSrivastava ◽  
Premlata Yadav ◽  
Subhasis Ghosh
Keyword(s):  
Dielectric Constant ◽  
Bilayer Graphene ◽  
Low Dielectric Constant ◽  
Low Dielectric
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