THE ADVANTAGE OF LOW GROWTH TEMPERATURE AND V/III RATIO FOR InxGa1-xAs NANOWIRES GROWTH
Keyword(s):
X Ray
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Cylindrical In x Ga 1-x As nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of In x Ga 1-x As NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition.
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