nanowires growth
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CrystEngComm ◽  
2022 ◽  
Author(s):  
Seon-Mi Jin ◽  
Jun Ho Hwang ◽  
Jung Ah Lim ◽  
Eunji Lee

Solution-processable precrystalline nanowires (NWs) of conjugated polymers (CPs) have garnered significant attention in fundamental research based on crystallization-driven self-assembly and in the roll-to-roll fabrication of optoelectronic devices such as organic...


2021 ◽  
Author(s):  
Shrok Allami

ZnO nanowires (or nanorods) have been widely studied due to their unique material properties and remarkable performance in electronics, optics, and photonics. This chapter presents a review of the current research of ZnO nanowires (or nanorods) synthesized by hydrothermal method. We discussed the mechanism of its nucleation and growth taking the effect of different parameters on its growth direction and their final morphology into account. A mixture of zinc nitrate and hexamine as precursor is the most popular. We reported the effect of precursor type and concentration, pH of the growth solution, bath temperature, substrate type and seeded layer, and duration time.


2021 ◽  
Vol 570 ◽  
pp. 126205
Author(s):  
R. Benabderrahmane Zaghouani ◽  
M. Yaacoubi Tabassi ◽  
J. Bennaceur ◽  
M. Srasra ◽  
H. Derouiche ◽  
...  

2021 ◽  
pp. 108093
Author(s):  
I. Mazzetta ◽  
F. Rigoni ◽  
F. Irrera ◽  
P. Riello ◽  
S. Quaranta ◽  
...  

2021 ◽  
Author(s):  
Y Xu ◽  
N Al-Salim ◽  
TH Lim ◽  
Christopher Bumby ◽  
S Cheong ◽  
...  

We report a facile one-pot solution phase synthesis of one-dimensional Ge1-x Sn x nanowires. These nanowires were synthesized in situ via a solution-liquid-solid (SLS) approach in which triphenylchlorogermane was reduced by sodium borohydride in the presence of tin nanoparticle seeds. Straight Ge1-x Sn x nanowires were obtained with an average diameter of 60 ± 20 nm and an approximate aspect ratio of 100. Energy-dispersive x-ray spectroscopy (EDX) and powder x-ray diffraction (PXRD) analysis revealed that tin was homogeneously incorporated within the germanium lattices at levels up to 10 at%, resulting in a measured lattice constant of 0.5742 nm. The crystal structure and growth orientation of the nanowires were investigated using high-resolution transmission electron microscopy (HRTEM). The nanowires adopted a face-centred-cubic structure with individual wires exhibiting growth along either the 111, 110 or 112 directions, in common with other group IV nanowires. Growth in the 112 direction was found to be accompanied by longitudinal planar twin defects. © 2020 The Author(s). Published by IOP Publishing Ltd.


2021 ◽  
Author(s):  
Y Xu ◽  
N Al-Salim ◽  
TH Lim ◽  
Christopher Bumby ◽  
S Cheong ◽  
...  

We report a facile one-pot solution phase synthesis of one-dimensional Ge1-x Sn x nanowires. These nanowires were synthesized in situ via a solution-liquid-solid (SLS) approach in which triphenylchlorogermane was reduced by sodium borohydride in the presence of tin nanoparticle seeds. Straight Ge1-x Sn x nanowires were obtained with an average diameter of 60 ± 20 nm and an approximate aspect ratio of 100. Energy-dispersive x-ray spectroscopy (EDX) and powder x-ray diffraction (PXRD) analysis revealed that tin was homogeneously incorporated within the germanium lattices at levels up to 10 at%, resulting in a measured lattice constant of 0.5742 nm. The crystal structure and growth orientation of the nanowires were investigated using high-resolution transmission electron microscopy (HRTEM). The nanowires adopted a face-centred-cubic structure with individual wires exhibiting growth along either the 111, 110 or 112 directions, in common with other group IV nanowires. Growth in the 112 direction was found to be accompanied by longitudinal planar twin defects. © 2020 The Author(s). Published by IOP Publishing Ltd.


Author(s):  
Р.Р. Резник ◽  
К.М. Морозов ◽  
И.Л. Крестников ◽  
К.П. Котляр ◽  
И.П. Сошников ◽  
...  

We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.


Author(s):  
Alla Nastovjak ◽  
Nataliya Shwartz ◽  
Yevgeniy Emelyanov ◽  
Mikhail Petrushkov

The model for the explanation of GaAs crystallite formation during the self-catalyzed nanowires growth was proposed using Monte Carlo simulation.


2020 ◽  
Vol 183 ◽  
pp. 109805
Author(s):  
Douglas Soares Oliveira ◽  
Mônica Alonso Cotta ◽  
José Eduardo Padilha

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