Unipolar electron transport polymer semiconductor based on fluorine- and nitrogen-substituted units for field-effect transistors

Author(s):  
Xiaojun Hao ◽  
Xiaofan Yang ◽  
Hongyu Zhao ◽  
Tingpeng Li
2021 ◽  
Vol 118 (4) ◽  
pp. 042105
Author(s):  
Junao Cheng ◽  
Hao Yang ◽  
Nicholas G. Combs ◽  
Wangzhou Wu ◽  
Honggyu Kim ◽  
...  

2017 ◽  
Vol 5 (14) ◽  
pp. 3568-3578 ◽  
Author(s):  
Dong Gao ◽  
Zhihui Chen ◽  
Jianyao Huang ◽  
Weifeng Zhang ◽  
Congyuan Wei ◽  
...  

The performance of polymer field-effect transistors was enhanced by microstructure engineering through the use of a bi-component solvent.


2014 ◽  
Vol 61 (10) ◽  
pp. 3539-3545 ◽  
Author(s):  
Max L. Wang ◽  
Jihan Chen ◽  
Moh Amer ◽  
Stephen Cronin ◽  
Adam Bushmaker

2013 ◽  
Vol 103 (22) ◽  
pp. 223305 ◽  
Author(s):  
Minhyeok Choe ◽  
Byoung Hoon Lee ◽  
Woojin Park ◽  
Jang-Won Kang ◽  
Sehee Jeong ◽  
...  

2018 ◽  
Vol 39 (14) ◽  
pp. 1700726 ◽  
Author(s):  
Rong Wang ◽  
Yikun Guo ◽  
Di Zhang ◽  
Huiqiong Zhou ◽  
Dahui Zhao ◽  
...  

Author(s):  
Zhihui Chen ◽  
Jianyao Huang ◽  
Weifeng Zhang ◽  
Yankai Zhou ◽  
Xuyang Wei ◽  
...  

N-type semiconducting polymers are important materials for modern electronics but limited in variety and performance. To design a new n-type polymer semiconductor requires a judicious trade-off between structural parameters involving...


2016 ◽  
Vol 4 (43) ◽  
pp. 10371-10380 ◽  
Author(s):  
Rukiya Matsidik ◽  
Alessandro Luzio ◽  
Sophie Hameury ◽  
Hartmut Komber ◽  
Christopher R. McNeill ◽  
...  

End group control: PNDIT2 with OH and tolyl chain termini are made and comparatively investigated.


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