scholarly journals Quantum Spin Hall Insulators in Tin Films: Beyond Stanene

SPIN ◽  
2019 ◽  
Vol 09 (04) ◽  
pp. 1940012
Author(s):  
Jiaheng Li ◽  
Yong Xu
Keyword(s):  
First Principles ◽  
Quantum Spin ◽  
First Principles Calculations ◽  
Experimental Realization ◽  
Tin Films ◽  
Energy Gaps ◽  
Change Behavior ◽  
Topological Quantum ◽  
Critical Film Thickness ◽  
Quantum Spin Hall

Large-gap quantum spin Hall (QSH) insulators were previously predicted in stanene and its derivatives. Beyond stanene that is the thinnest [Formula: see text]-Sn(111) film, we propose to explore QSH insulators in [Formula: see text]-Sn films with different crystallographic orientations. Our first-principles calculations reveal that the thickness-dependent band gap of [Formula: see text]-Sn(100) and [Formula: see text]-Sn(110) films does not show a monotonic decrease as typically expected by quantum confinement, but displays an oscillating change behavior, an indicative of topological quantum phase transition. While these films are normal insulators in the ultrathin limit, the QSH phase emerges above a critical film thickness of around 10 layers. Remarkably, the QSH insulators are obtainable within a wide thickness range and their energy gaps are sizable (even [Formula: see text][Formula: see text]0.1[Formula: see text]eV), which facilitates experimental realization of the high-temperature QSH effect.

Prediction of flatness-driven quantum spin Hall effect in functionalized germanene and stanene

2016 ◽  
Vol 18 (40) ◽  
pp. 28134-28139 ◽  
Author(s):  
Run-wu Zhang ◽  
Wei-xiao Ji ◽  
Chang-wen Zhang ◽  
Ping Li ◽  
Pei-ji Wang
Keyword(s):  
Hall Effect ◽  
First Principles ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
First Principles Calculations ◽  
Quantum Spin Hall Effect ◽  
Chemical Functionalization ◽  
Quantum Spin Hall

We used first-principles calculations to predict a class of new QSH phases for f-Ge(Sn)X2 films, which are useful for applications because of not only their sizable nontrivial bulk gaps, but also the tunability of the QSH states by chemical functionalization.

scholarly journals Confinement Effect Driven Quantum Spin Hall Effect in Monolayer AuTe2Cl

SPIN ◽  
2019 ◽  
Vol 09 (04) ◽  
pp. 1940014
Author(s):  
Guyue Zhong ◽  
Q. Xie ◽  
Gang Xu
Keyword(s):  
First Principles ◽  
Three Dimensional ◽  
Bulk Sample ◽  
Quantum Spin ◽  
Confinement Effect ◽  
First Principles Calculations ◽  
Quantum Spin Hall Effect ◽  
Band Inversion ◽  
Topological Semimetal ◽  
Quantum Spin Hall

Based on first-principles calculations, we predict that the monolayer AuTe2Cl is a quantum spin Hall (QSH) insulator with a topological band gap about 10 meV. The three-dimensional (3D) AuTe2Cl is a topological semimetal that can be viewed as the monolayer stacking along [Formula: see text] axis. By studying the energy-level distribution of [Formula: see text] orbitals of Te atoms for the bulk and the monolayer, we find that the confinement effect driven [Formula: see text] band inversion is responsible for the topological nontrivial nature of monolayer. Since 3D bulk AuTe2Cl has already been experimentally synthesized, we expect that monolayer AuTe2Cl can be exfoliated from a bulk sample and the predicted QSH effect can be observed.

Quantum spin Hall effect in two-dimensional hydrogenated SnPb alloy films

2018 ◽  
Vol 20 (14) ◽  
pp. 9610-9615
Author(s):  
Miaojuan Ren ◽  
Min Yuan ◽  
Xinlian Chen ◽  
Weixiao Ji ◽  
Ping Li ◽  
...  
Keyword(s):  
Hall Effect ◽  
First Principles ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Band Structures ◽  
Alloy Films ◽  
Quantum Spin Hall Effect ◽  
Quantum Spin Hall

Using first-principles calculations, we studied the geometric and band structures of 20 possible configurations of buckled hydrogenated SnPb alloy (SnxPb8−xH8) films.

New family of room temperature quantum spin Hall insulators in two-dimensional germanene films

2016 ◽  
Vol 4 (10) ◽  
pp. 2088-2094 ◽  
Author(s):  
Run-wu Zhang ◽  
Wei-xiao Ji ◽  
Chang-wen Zhang ◽  
Sheng-shi Li ◽  
Ping Li ◽  
...  
Keyword(s):  
First Principles ◽  
Topological Insulators ◽  
Room Temperature ◽  
Quantum Spin ◽  
Band Gaps ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
New Family ◽  
Temperature Applications ◽  
Quantum Spin Hall

Based on first-principles calculations, we predict that 2D germanene decorated with ethynyl-derivatives (GeC2X; X = H, F, Cl, Br, I) can be topological insulators with large band-gaps for room-temperature applications.

Spin rectification by orbital polarization in Bi-bilayer nanoribbons

2016 ◽  
Vol 18 (12) ◽  
pp. 8637-8642 ◽  
Author(s):  
Kyung-Hwan Jin ◽  
Seung-Hoon Jhi
Keyword(s):  
First Principles ◽  
Quantum Spin ◽  
Edge States ◽  
First Principles Calculations ◽  
Transport Method ◽  
Non Equilibrium ◽  
Quantum Spin Hall

We investigate the edge states of quantum spin-Hall phase Bi(111) bilayer nano-ribbons (BNRs) and their spin-rectifying effect using first-principles calculations and the non-equilibrium transport method.

Gate-tunable superconductivity and charge-density wave in monolayer 1T$'$-MoTe$_2$ and 1T$'$-WTe$_2$

2021 ◽  
Author(s):  
Young-Woo Son ◽  
Jun-Ho Lee
Keyword(s):  
Phase Transitions ◽  
Charge Density ◽  
First Principles ◽  
Charge Density Wave ◽  
Density Wave ◽  
Quantum Spin ◽  
First Principles Calculation ◽  
Calculation Methods ◽  
Electron Doping ◽  
Quantum Spin Hall

Using first-principles calculation methods, we reveal a series of phase transitions as a function of gating or electron doping in monolayered quantum spin Hall (QSH) insulators, 1T$'$-MoTe$_2$ and 1T$'$-WTe$_2$. As...

scholarly journals Large bandgap quantum spin Hall insulator in methyl decorated plumbene monolayer: a first-principles study

RSC Advances ◽  
2019 ◽  
Vol 9 (72) ◽  
pp. 42194-42203 ◽  
Author(s):  
Shoaib Mahmud ◽  
Md. Kawsar Alam
Keyword(s):  
First Principles ◽  
Quantum Spin ◽  
First Principles Study ◽  
Quantum Spin Hall

Formulating methyl and trihalogenomethyl decorated plumbene monolayers as quantum spin Hall insulators for application in spintronic and dissipationless transport.

scholarly journals Strain induced quantum spin Hall insulator in monolayer β-BiSb from first-principles study

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27816-27822 ◽  
Author(s):  
Weiyang Yu ◽  
Chun-Yao Niu ◽  
Zhili Zhu ◽  
Xiaolin Cai ◽  
Liwei Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
Topological Insulator ◽  
First Principles ◽  
Electronic Devices ◽  
Quantum Spin ◽  
Lower Power ◽  
First Principles Study ◽  
Potential Applications ◽  
Quantum Spin Hall

Topological insulator (TI) is a peculiar phase of matter exhibiting excellent quantum transport properties with potential applications in lower-power-consuming electronic devices.

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