High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

Tomonori Nishimura; Choong Hyun Lee; Toshiyuki Tabata; Sheng Kai Wang; Kosuke Nagashio; Koji Kita; Akira Toriumi

doi:10.1143/apex.4.064201

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

Applied Physics Express ◽

10.1143/apex.4.064201 ◽

2011 ◽

Vol 4 (6) ◽

pp. 064201 ◽

Cited By ~ 59

Author(s):

Tomonori Nishimura ◽

Choong Hyun Lee ◽

Toshiyuki Tabata ◽

Sheng Kai Wang ◽

Kosuke Nagashio ◽

...

Keyword(s):

High Pressure ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

Download Full-text

High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon–Germanium (SiGe) Nanostructures ◽

10.1533/9780857091420.4.528 ◽

2011 ◽

pp. 528-550

Author(s):

A. Toriumi

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

Download Full-text

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3533767 ◽

2011 ◽

Vol 109 (2) ◽

pp. 023702 ◽

Cited By ~ 24

Author(s):

B. R. Tuttle ◽

S. Dhar ◽

S.-H. Ryu ◽

X. Zhu ◽

J. R. Williams ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Sodium Ions ◽

High Electron Mobility

Download Full-text

Novel Insulators for Gallium Nitride Metal-Oxide Semiconductor Field Effect Transistors and AlGaN-GaN Metal-Oxide Semiconductor High Electron Mobility Transistors

Engineering Materials and Processes - Gallium Nitride Processing for Electronics, Sensors and Spintronics ◽

10.1007/1-84628-359-0_6 ◽

2006 ◽

pp. 313-360

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors

Semiconductor Science and Technology ◽

10.1088/1361-6641/abce8c ◽

2020 ◽

Vol 36 (2) ◽

pp. 024003

Author(s):

K Takakura ◽

V Putcha ◽

E Simoen ◽

A R Alian ◽

U Peralagu ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

High Electron ◽

High Electron Mobility

Download Full-text

Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Cited By ~ 22

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

Si Substrates

Download Full-text

Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.2013314 ◽

2005 ◽

Vol 23 (5) ◽

pp. 1943 ◽

Cited By ~ 8

Author(s):

Chin-Chuan Cheng ◽

Yan-Ying Tsai ◽

Kun-Wei Lin ◽

Huey-Ing Chen ◽

Wei-Hsi Hsu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Hydrogen Sensing ◽

Sensing Characteristics

Download Full-text

Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures

Journal of Applied Physics ◽

10.1063/1.1638610 ◽

2004 ◽

Vol 95 (3) ◽

pp. 1550-1555 ◽

Cited By ~ 11

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dual Channel

Download Full-text

Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.5044590 ◽

2018 ◽

Vol 124 (16) ◽

pp. 165704 ◽

Cited By ~ 2

Author(s):

Jaya Jha ◽

Bhanu B. Upadhyay ◽

Kuldeep Takhar ◽

Navneet Bhardwaj ◽

Swaroop Ganguly ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Carrier Trapping ◽

Electron Mobility Transistors ◽

Field Dependent

Download Full-text

Metal Oxide Semiconductor High Electron Mobility Transistors

Handbook for III-V High Electron Mobility Transistor Technologies ◽

10.1201/9780429460043-15 ◽

2019 ◽

pp. 391-402 ◽

Cited By ~ 1

Author(s):

D. K. Panda ◽

G. Amarnath ◽

T. R. Lenka

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with TiO2 gate dielectrics

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528615 ◽

2016 ◽

Author(s):

Yu-Shyan Lin ◽

Chi-Che Lu

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text