High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3533767 ◽

2011 ◽

Vol 109 (2) ◽

pp. 023702 ◽

Author(s):

B. R. Tuttle ◽

S. Dhar ◽

S.-H. Ryu ◽

X. Zhu ◽

J. R. Williams ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Sodium Ions ◽

High Electron Mobility

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High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

Applied Physics Express ◽

10.1143/apex.4.064201 ◽

2011 ◽

Vol 4 (6) ◽

pp. 064201 ◽

Author(s):

Tomonori Nishimura ◽

Choong Hyun Lee ◽

Toshiyuki Tabata ◽

Sheng Kai Wang ◽

Kosuke Nagashio ◽

...

Keyword(s):

High Pressure ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon–Germanium (SiGe) Nanostructures ◽

10.1533/9780857091420.4.528 ◽

2011 ◽

pp. 528-550

Author(s):

A. Toriumi

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Novel Insulators for Gallium Nitride Metal-Oxide Semiconductor Field Effect Transistors and AlGaN-GaN Metal-Oxide Semiconductor High Electron Mobility Transistors

Engineering Materials and Processes - Gallium Nitride Processing for Electronics, Sensors and Spintronics ◽

10.1007/1-84628-359-0_6 ◽

2006 ◽

pp. 313-360

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors

Semiconductor Science and Technology ◽

10.1088/1361-6641/abce8c ◽

2020 ◽

Vol 36 (2) ◽

pp. 024003

Author(s):

K Takakura ◽

V Putcha ◽

E Simoen ◽

A R Alian ◽

U Peralagu ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

High Electron ◽

High Electron Mobility

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Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Applied Physics Letters ◽

10.1063/1.4795717 ◽

2013 ◽

Vol 102 (10) ◽

pp. 103504 ◽

Author(s):

X. Sun ◽

O. I. Saadat ◽

K. S. Chang-Liao ◽

T. Palacios ◽

S. Cui ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

Applied Physics Letters ◽

10.1063/1.1567051 ◽

2003 ◽

Vol 82 (15) ◽

pp. 2530-2532 ◽

Author(s):

R. Mehandru ◽

B. Luo ◽

J. Kim ◽

F. Ren ◽

B. P. Gila ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Surface Passivation ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.2013314 ◽

2005 ◽

Vol 23 (5) ◽

pp. 1943 ◽

Author(s):

Chin-Chuan Cheng ◽

Yan-Ying Tsai ◽

Kun-Wei Lin ◽

Huey-Ing Chen ◽

Wei-Hsi Hsu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Hydrogen Sensing ◽

Sensing Characteristics

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Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures

Journal of Applied Physics ◽

10.1063/1.1638610 ◽

2004 ◽

Vol 95 (3) ◽

pp. 1550-1555 ◽

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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